P

Inventor

GARDNER MARK I

US615 patents

Patents

50 patents
US6255698B1Jul 3, 2001

Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuit

ADVANCED MICRO DEVICES INC202 citations99
US6225168B1May 1, 2001

Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof

ADVANCED MICRO DEVICES INC239 citations99
US6210999B1Apr 3, 2001

Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices

ADVANCED MICRO DEVICES INC211 citations99
US6111260AAug 29, 2000

Method and apparatus for in situ anneal during ion implant

ADVANCED MICRO DEVICES INC305 citations99
US6093611AJul 25, 2000

Oxide liner for high reliability with reduced encroachment of the source/drain region

ADVANCED MICRO DEVICES INC294 citations99
US6080640AJun 27, 2000

Metal attachment method and structure for attaching substrates at low temperatures

ADVANCED MICRO DEVICES INC291 citations99
US6075268AJun 13, 2000

Ultra high density inverter using a stacked transistor arrangement

ADVANCED MICRO DEVICES INC256 citations99
US6015739AJan 18, 2000

Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant

ADVANCED MICRO DEVICES INC166 citations99
US5905285AMay 18, 1999

Ultra short trench transistors and process for making same

ADVANCED MICRO DEVICES INC188 citations99
US5793090AAug 11, 1998

Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance

ADVANCED MICRO DEVICES INC123 citations99
US5770483AJun 23, 1998

Multi-level transistor fabrication method with high performance drain-to-gate connection

ADVANCED MICRO DEVICES INC256 citations99
US6373113B1Apr 16, 2002

Nitrogenated gate structure for improved transistor performance and method for making same

ADVANCED MICRO DEVICES INC81 citations98
US6323519B1Nov 27, 2001

Ultrathin, nitrogen-containing MOSFET sidewall spacers using low-temperature semiconductor fabrication process

ADVANCED MICRO DEVICES INC90 citations98
US6200865B1Mar 13, 2001

Use of sacrificial dielectric structure to form semiconductor device with a self-aligned threshold adjust and overlying low-resistance gate

ADVANCED MICRO DEVICES INC116 citations98
US6194283B1Feb 27, 2001

High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacers

ADVANCED MICRO DEVICES INC89 citations98
US6169306B1Jan 2, 2001

Semiconductor devices comprised of one or more epitaxial layers

ADVANCED MICRO DEVICES INC92 citations98
US6150222ANov 21, 2000

Method of making a high performance transistor with elevated spacer formation and self-aligned channel regions

ADVANCED MICRO DEVICES INC106 citations98
US6150286ANov 21, 2000

Method of making an ultra thin silicon nitride film

ADVANCED MICRO DEVICES INC167 citations98
US6140688AOct 31, 2000

Semiconductor device with self-aligned metal-containing gate

ADVANCED MICRO DEVICES INC88 citations98
US6097096AAug 1, 2000

Metal attachment method and structure for attaching substrates at low temperatures

ADVANCED MICRO DEVICES INC116 citations98
US6074919AJun 13, 2000

Method of forming an ultrathin gate dielectric

ADVANCED MICRO DEVICES INC99 citations98
US6060345AMay 9, 2000

Method of making NMOS and PMOS devices with reduced masking steps

ADVANCED MICRO DEVICES INC114 citations98
US6048766AApr 11, 2000

Flash memory device having high permittivity stacked dielectric and fabrication thereof

ADVANCED MICRO DEVICES INC91 citations98
US5943585AAug 24, 1999

Trench isolation structure having low K dielectric spacers arranged upon an oxide liner incorporated with nitrogen

ADVANCED MICRO DEVICES INC92 citations98
US5930642AJul 27, 1999

Transistor with buried insulative layer beneath the channel region

ADVANCED MICRO DEVICES INC104 citations98
US5918129AJun 29, 1999

Method of channel doping using diffusion from implanted polysilicon

ADVANCED MICRO DEVICES INC110 citations98
US5907780AMay 25, 1999

Incorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantation

ADVANCED MICRO DEVICES INC96 citations98
US5888880AMar 30, 1999

Trench transistor with localized source/drain regions implanted through selectively grown oxide layer

ADVANCED MICRO DEVICES INC113 citations98
US5885877AMar 23, 1999

Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric

ADVANCED MICRO DEVICES INC107 citations98
US5837572ANov 17, 1998

CMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted therein

ADVANCED MICRO DEVICES INC103 citations98
US5811347ASep 22, 1998

Nitrogenated trench liner for improved shallow trench isolation

ADVANCED MICRO DEVICES INC105 citations98
US6410967B1Jun 25, 2002

Transistor having enhanced metal silicide and a self-aligned gate electrode

ADVANCED MICRO DEVICES INC76 citations96
US6355955B1Mar 12, 2002

Transistor and a method for forming the transistor with elevated and/or relatively shallow source/drain regions to achieve enhanced gate electrode formation

ADVANCED MICRO DEVICES INC64 citations96
US6268637B1Jul 31, 2001

Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabrication

ADVANCED MICRO DEVICES INC73 citations96
US6259142B1Jul 10, 2001

Multiple split gate semiconductor device and fabrication method

ADVANCED MICRO DEVICES INC67 citations96
US6258680B1Jul 10, 2001

Integrated circuit gate conductor which uses layered spacers to produce a graded junction

ADVANCED MICRO DEVICES INC67 citations96
US6245652B1Jun 12, 2001

Method of forming ultra thin gate dielectric for high performance semiconductor devices

ADVANCED MICRO DEVICES INC57 citations96
US6225151B1May 1, 2001

Nitrogen liner beneath transistor source/drain regions to retard dopant diffusion

ADVANCED MICRO DEVICES INC68 citations96
US6201278B1Mar 13, 2001

Trench transistor with insulative spacers

ADVANCED MICRO DEVICES INC48 citations96
US6191446B1Feb 20, 2001

Formation and control of a vertically oriented transistor channel length

ADVANCED MICRO DEVICES INC80 citations96
US6187620B1Feb 13, 2001

Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions

ADVANCED MICRO DEVICES INC54 citations96
US6172381B1Jan 9, 2001

Source/drain junction areas self aligned between a sidewall spacer and an etched lateral sidewall

ADVANCED MICRO DEVICES INC61 citations96
US6162688ADec 19, 2000

Method of fabricating a transistor with a dielectric underlayer and device incorporating same

ADVANCED MICRO DEVICES INC80 citations96
US6150708ANov 21, 2000

Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density

ADVANCED MICRO DEVICES INC56 citations96
US6146934ANov 14, 2000

Semiconductor device with asymmetric PMOS source/drain implant and method of manufacture thereof

ADVANCED MICRO DEVICES INC64 citations96
US6144071ANov 7, 2000

Ultrathin silicon nitride containing sidewall spacers for improved transistor performance

ADVANCED MICRO DEVICES INC54 citations96
US6137182AOct 24, 2000

Method of reducing via and contact dimensions beyond photolithography equipment limits

ADVANCED MICRO DEVICES INC67 citations96
US6124620ASep 26, 2000

Incorporating barrier atoms into a gate dielectric using gas cluster ion beam implantation

ADVANCED MICRO DEVICES INC56 citations96
US6118137ASep 12, 2000

Test structure responsive to electrical signals for determining lithographic misalignment of conductors relative to vias

ADVANCED MICRO DEVICES INC70 citations96
US6110784AAug 29, 2000

Method of integration of nitrogen bearing high K film

ADVANCED MICRO DEVICES INC54 citations96

Showing the top 50 of 615 patents by PatentIndex Score.