Inventor
PINARBASI MUSTAFA
US154 patents
⚠️ This page may combine multiple inventors who share the name “PINARBASI MUSTAFA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
41 patentsUS5883764AMar 16, 1999
Magnetoresistive sensor having multi-layered refractory metal conductor leads
IBM98 citations98
US6583969B1Jun 24, 2003
Pinned layer structure having nickel iron film for reducing coercivity of a free layer structure in a spin valve sensor
IBM56 citations96
US6381106B1Apr 30, 2002
Top spin valve sensor that has a free layer structure with a cobalt iron boron (cofeb) layer
IBM66 citations96
US6275362B1Aug 14, 2001
Magnetic read head having spin valve sensor with improved seed layer for a free layer
IBM68 citations96
US6208491B1Mar 27, 2001
Spin valve with improved capping layer structure
IBM59 citations96
US6208492B1Mar 27, 2001
Seed layer structure for spin valve sensor
IBM71 citations96
US6086727AJul 11, 2000
Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
IBM82 citations96
US6218056B1Apr 17, 2001
Method of making highly defined bilayer lift-off mask
IBM62 citations95
US5491600AFeb 13, 1996
Multi-layer conductor leads in a magnetoresistive head
IBM134 citations95
US6865062B2Mar 8, 2005
Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer
IBM35 citations93
US6856493B2Feb 15, 2005
Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer
IBM37 citations93
US6741432B2May 25, 2004
Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and self-pinned antiparallel (AP) pinned layer structure
IBM46 citations93
US6661622B1Dec 9, 2003
Method to achieve low and stable ferromagnetic coupling field
IBM20 citations93
US6655006B2Dec 2, 2003
Method of making a tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier layer
IBM20 citations93
US6636400B2Oct 21, 2003
Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer
IBM39 citations93
US6624985B1Sep 23, 2003
Pinning layer seeds for CPP geometry spin valve sensors
IBM37 citations93
US6428657B1Aug 6, 2002
Magnetic read head sensor with a reactively sputtered pinning layer structure
IBM17 citations93
US6413380B1Jul 2, 2002
Method and apparatus for providing deposited layer structures and articles so produced
IBM51 citations93
US6404606B1Jun 11, 2002
Seed layer structure for a platinum manganese pinning layer in a spin valve sensor
IBM27 citations93
US6398924B1Jun 4, 2002
Spin valve sensor with improved pinning field between nickel oxide (NiO) pinning layer and pinned layer
IBM19 citations93
US6353519B2Mar 5, 2002
Spin valve sensor having antiparallel (AP) pinned layer structure with high resistance and low coercivity
IBM22 citations93
US6353518B2Mar 5, 2002
Spin valve sensor having antiparallel (AP) pinned layer structure with low coercivity and high resistance
IBM26 citations93
US6327122B1Dec 4, 2001
Spin valve sensor having antiparallel (AP) pinned layer with high resistance and low coercivity
IBM17 citations93
US6317299B1Nov 13, 2001
Seed layer for improving pinning field spin valve sensor
IBM33 citations93
US6296741B1Oct 2, 2001
Method of making oxide barrier layer for a spin tunnel junction
IBM23 citations93
US6295187B1Sep 25, 2001
Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer
IBM38 citations93
US6282068B1Aug 28, 2001
Antiparallel (AP) pinned read head with improved GMR
IBM23 citations93
US6268985B1Jul 31, 2001
Read head having spin valve sensor with improved capping layer
IBM49 citations93
US6249406B1Jun 19, 2001
Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction
IBM41 citations93
US6238531B1May 29, 2001
Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
IBM29 citations93
US6226159B1May 1, 2001
Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors
IBM33 citations93
US6219207B1Apr 17, 2001
Read sensor having high conductivity multilayer lead structure with a molybdenum layer
IBM47 citations93
US6219210B1Apr 17, 2001
Spin valve sensor with nickel oxide pinning layer on a chromium seed layer
IBM23 citations93
US6201671B1Mar 13, 2001
Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
IBM40 citations93
US6201672B1Mar 13, 2001
Spin valve sensor having improved interface between pinning layer and pinned layer structure
IBM23 citations93
US6063244AMay 16, 2000
Dual chamber ion beam sputter deposition system
IBM51 citations93
US6038107AMar 14, 2000
Antiparallel-pinned spin valve sensor
IBM34 citations93
US5871622AFeb 16, 1999
Method for making a spin valve magnetoresistive sensor
IBM53 citations93
US5696654ADec 9, 1997
Dual element magnetoresistive sensor with antiparallel magnetization directions for magnetic state stability
IBM51 citations93
US5492605AFeb 20, 1996
Ion beam induced sputtered multilayered magnetic structures
IBM46 citations93
US6306266B1Oct 23, 2001
Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performance
IBM35 citations92
HITACHI GLOBAL STORAGE TECH
4 patentsUS6785102B2Aug 31, 2004
Spin valve sensor with dual self-pinned AP pinned layer structures
HITACHI GLOBAL STORAGE TECH41 citations93
US6751072B2Jun 15, 2004
High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure
HITACHI GLOBAL STORAGE TECH18 citations93
US6861177B2Mar 1, 2005
Method of forming a read sensor using a lift-off mask having a hardmask layer and a release layer
HITACHI GLOBAL STORAGE TECH19 citations92
US6744607B2Jun 1, 2004
Exchange biased self-pinned spin valve sensor with recessed overlaid leads
HITACHI GLOBAL STORAGE TECH21 citations92
SPIN TRANSFER TECH INC
3 patentsUS9406876B2Aug 2, 2016
Method for manufacturing MTJ memory device
SPIN TRANSFER TECH INC100 citations98
US9741926B1Aug 22, 2017
Memory cell having magnetic tunnel junction and thermal stability enhancement layer
SPIN TRANSFER TECH INC89 citations96
US10032978B1Jul 24, 2018
MRAM with reduced stray magnetic fields
SPIN TRANSFER TECH INC33 citations94
SPIN TRANSFER TECHNOLOGIES INC
2 patentsShowing the top 50 of 154 patents by PatentIndex Score.