P

Inventor

PINARBASI MUSTAFA

US154 patents
⚠️ This page may combine multiple inventors who share the name “PINARBASI MUSTAFA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

41 patents
US5883764AMar 16, 1999

Magnetoresistive sensor having multi-layered refractory metal conductor leads

IBM98 citations98
US6583969B1Jun 24, 2003

Pinned layer structure having nickel iron film for reducing coercivity of a free layer structure in a spin valve sensor

IBM56 citations96
US6381106B1Apr 30, 2002

Top spin valve sensor that has a free layer structure with a cobalt iron boron (cofeb) layer

IBM66 citations96
US6275362B1Aug 14, 2001

Magnetic read head having spin valve sensor with improved seed layer for a free layer

IBM68 citations96
US6208491B1Mar 27, 2001

Spin valve with improved capping layer structure

IBM59 citations96
US6208492B1Mar 27, 2001

Seed layer structure for spin valve sensor

IBM71 citations96
US6086727AJul 11, 2000

Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system

IBM82 citations96
US6218056B1Apr 17, 2001

Method of making highly defined bilayer lift-off mask

IBM62 citations95
US5491600AFeb 13, 1996

Multi-layer conductor leads in a magnetoresistive head

IBM134 citations95
US6865062B2Mar 8, 2005

Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer

IBM35 citations93
US6856493B2Feb 15, 2005

Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer

IBM37 citations93
US6741432B2May 25, 2004

Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and self-pinned antiparallel (AP) pinned layer structure

IBM46 citations93
US6661622B1Dec 9, 2003

Method to achieve low and stable ferromagnetic coupling field

IBM20 citations93
US6655006B2Dec 2, 2003

Method of making a tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier layer

IBM20 citations93
US6636400B2Oct 21, 2003

Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer

IBM39 citations93
US6624985B1Sep 23, 2003

Pinning layer seeds for CPP geometry spin valve sensors

IBM37 citations93
US6428657B1Aug 6, 2002

Magnetic read head sensor with a reactively sputtered pinning layer structure

IBM17 citations93
US6413380B1Jul 2, 2002

Method and apparatus for providing deposited layer structures and articles so produced

IBM51 citations93
US6404606B1Jun 11, 2002

Seed layer structure for a platinum manganese pinning layer in a spin valve sensor

IBM27 citations93
US6398924B1Jun 4, 2002

Spin valve sensor with improved pinning field between nickel oxide (NiO) pinning layer and pinned layer

IBM19 citations93
US6353519B2Mar 5, 2002

Spin valve sensor having antiparallel (AP) pinned layer structure with high resistance and low coercivity

IBM22 citations93
US6353518B2Mar 5, 2002

Spin valve sensor having antiparallel (AP) pinned layer structure with low coercivity and high resistance

IBM26 citations93
US6327122B1Dec 4, 2001

Spin valve sensor having antiparallel (AP) pinned layer with high resistance and low coercivity

IBM17 citations93
US6317299B1Nov 13, 2001

Seed layer for improving pinning field spin valve sensor

IBM33 citations93
US6296741B1Oct 2, 2001

Method of making oxide barrier layer for a spin tunnel junction

IBM23 citations93
US6295187B1Sep 25, 2001

Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer

IBM38 citations93
US6282068B1Aug 28, 2001

Antiparallel (AP) pinned read head with improved GMR

IBM23 citations93
US6268985B1Jul 31, 2001

Read head having spin valve sensor with improved capping layer

IBM49 citations93
US6249406B1Jun 19, 2001

Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction

IBM41 citations93
US6238531B1May 29, 2001

Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system

IBM29 citations93
US6226159B1May 1, 2001

Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors

IBM33 citations93
US6219207B1Apr 17, 2001

Read sensor having high conductivity multilayer lead structure with a molybdenum layer

IBM47 citations93
US6219210B1Apr 17, 2001

Spin valve sensor with nickel oxide pinning layer on a chromium seed layer

IBM23 citations93
US6201671B1Mar 13, 2001

Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor

IBM40 citations93
US6201672B1Mar 13, 2001

Spin valve sensor having improved interface between pinning layer and pinned layer structure

IBM23 citations93
US6063244AMay 16, 2000

Dual chamber ion beam sputter deposition system

IBM51 citations93
US6038107AMar 14, 2000

Antiparallel-pinned spin valve sensor

IBM34 citations93
US5871622AFeb 16, 1999

Method for making a spin valve magnetoresistive sensor

IBM53 citations93
US5696654ADec 9, 1997

Dual element magnetoresistive sensor with antiparallel magnetization directions for magnetic state stability

IBM51 citations93
US5492605AFeb 20, 1996

Ion beam induced sputtered multilayered magnetic structures

IBM46 citations93
US6306266B1Oct 23, 2001

Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performance

IBM35 citations92

HITACHI GLOBAL STORAGE TECH

4 patents

SPIN TRANSFER TECH INC

3 patents

SPIN TRANSFER TECHNOLOGIES INC

2 patents

Showing the top 50 of 154 patents by PatentIndex Score.