Inventor
HONG HUICONG
US14 patents
⚠️ This page may combine multiple inventors who share the name “HONG HUICONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOMENTIVE PERFORMANCE MAT INC
7 patentsUS7642122B2Jan 5, 2010
Method for forming nitride crystals
MOMENTIVE PERFORMANCE MAT INC95 citations97
US7582498B2Sep 1, 2009
Resonant cavity light emitting devices and associated method
MOMENTIVE PERFORMANCE MAT INC69 citations97
US7368015B2May 6, 2008
Apparatus for producing single crystal and quasi-single crystal, and associated method
MOMENTIVE PERFORMANCE MAT INC134 citations97
US7859008B2Dec 28, 2010
Crystalline composition, wafer, device, and associated method
MOMENTIVE PERFORMANCE MAT INC9 citations84
US7786503B2Aug 31, 2010
Gallium nitride crystals and wafers and method of making
MOMENTIVE PERFORMANCE MAT INC13 citations84
US7638815B2Dec 29, 2009
Crystalline composition, wafer, and semi-conductor structure
MOMENTIVE PERFORMANCE MAT INC5 citations62
US8357945B2Jan 22, 2013
Gallium nitride crystal and method of making same
MOMENTIVE PERFORMANCE MAT INC0 citations52
GEN ELECTRIC
4 patentsUS7078731B2Jul 18, 2006
Gallium nitride crystals and wafers and method of making
GEN ELECTRIC270 citations98
US7009215B2Mar 7, 2006
Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
GEN ELECTRIC99 citations97
US7704324B2Apr 27, 2010
Apparatus for processing materials in supercritical fluids and methods thereof
GEN ELECTRIC97 citations94
US7098487B2Aug 29, 2006
Gallium nitride crystal and method of making same
GEN ELECTRIC100 citations94
SORAA INC
2 patentsUS10975492B2Apr 13, 2021
Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution
SORAA INC1 citations72
US10208396B2Feb 19, 2019
Crystalline gallium nitride containing flourine
SORAA INC0 citations51