Inventor
GEISS PETER J
US21 patents
Patents
21 patentsUS5508542AApr 16, 1996
Porous silicon trench and capacitor structures
IBM184 citations99
US5635419AJun 3, 1997
Porous silicon trench and capacitor structures
IBM49 citations96
US6965133B2Nov 15, 2005
Method of base formation in a BiCMOS process
IBM16 citations92
US5356837AOct 18, 1994
Method of making epitaxial cobalt silicide using a thin metal underlayer
IBM39 citations92
US6682992B2Jan 27, 2004
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures
IBM13 citations90
US6936509B2Aug 30, 2005
STI pull-down to control SiGe facet growth
IBM16 citations89
US7002190B1Feb 21, 2006
Method of collector formation in BiCMOS technology
IBM12 citations84
US6967167B2Nov 22, 2005
Silicon dioxide removing method
IBM16 citations84
US6448124B1Sep 10, 2002
Method for epitaxial bipolar BiCMOS
IBM16 citations84
US6541336B1Apr 1, 2003
Method of fabricating a bipolar transistor having a realigned emitter
IBM13 citations82
US7390721B2Jun 24, 2008
Methods of base formation in a BiCMOS process
IBM6 citations74
US6911681B1Jun 28, 2005
Method of base formation in a BiCMOS process
IBM5 citations74
US7696034B2Apr 13, 2010
Methods of base formation in a BiCOMS process
IBM6 citations73
US6660664B1Dec 9, 2003
Structure and method for formation of a blocked silicide resistor
IBM9 citations72
US7777302B2Aug 17, 2010
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure
IBM5 citations71
US7625792B2Dec 1, 2009
Method of base formation in a BiCMOS process
IBM4 citations63
US7538004B2May 26, 2009
Method of fabrication for SiGe heterojunction bipolar transistor (HBT)
IBM2 citations63
US7247924B2Jul 24, 2007
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures
IBM3 citations60
US7491985B2Feb 17, 2009
Method of collector formation in BiCMOS technology
IBM1 citations52
US7317215B2Jan 8, 2008
SiGe heterojunction bipolar transistor (HBT)
IBM1 citations52
US6674102B2Jan 6, 2004
Sti pull-down to control SiGe facet growth
IBM1 citations48