Inventor
YANG HUNG-MO
KR13 patents
⚠️ This page may combine multiple inventors who share the name “YANG HUNG-MO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS7217623B2May 15, 2007
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD41 citations96
US7868380B2Jan 11, 2011
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD12 citations92
US6365928B1Apr 2, 2002
Semiconductor memory storage electrode and method of making
SAMSUNG ELECTRONICS CO LTD20 citations90
US7494895B2Feb 24, 2009
Method of fabricating a three-dimensional MOSFET employing a hard mask spacer
SAMSUNG ELECTRONICS CO LTD8 citations83
US5786265AJul 28, 1998
Methods of forming integrated semiconductor devices having improved channel-stop regions therein, and devices formed thereby
SAMSUNG ELECTRONICS CO LTD19 citations81
US8053833B2Nov 8, 2011
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD5 citations73
US5523255AJun 4, 1996
Method for forming a device isolation film of a semiconductor device
SAMSUNG ELECTRONICS CO LTD10 citations68
US7436047B2Oct 14, 2008
Wafer having scribe lanes suitable for sawing process, reticle used in manufacturing the same, and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US9893190B2Feb 13, 2018
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9640665B2May 2, 2017
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9196733B2Nov 24, 2015
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations52