P

Inventor

CHENG JERRY

US28 patents
⚠️ This page may combine multiple inventors who share the name “CHENG JERRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

13 patents
US6472317B1Oct 29, 2002

Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layers

ADVANCED MICRO DEVICES INC43 citations96
US6291887B1Sep 18, 2001

Dual damascene arrangements for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer

ADVANCED MICRO DEVICES INC32 citations92
US6255735B1Jul 3, 2001

Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layers

ADVANCED MICRO DEVICES INC16 citations92
US6235628B1May 22, 2001

Method of forming dual damascene arrangement for metal interconnection with low k dielectric constant materials and oxide middle etch stop layer

ADVANCED MICRO DEVICES INC49 citations92
US6153514ANov 28, 2000

Self-aligned dual damascene arrangement for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer

ADVANCED MICRO DEVICES INC33 citations92
US6086777AJul 11, 2000

Tantalum barrier metal removal by using CF4 /o2 plasma dry etch

ADVANCED MICRO DEVICES INC25 citations92
US6207577B1Mar 27, 2001

Self-aligned dual damascene arrangement for metal interconnection with oxide dielectric layer and low k dielectric constant layer

ADVANCED MICRO DEVICES INC19 citations84
US6207576B1Mar 27, 2001

Self-aligned dual damascene arrangement for metal interconnection with low k dielectric constant materials and oxide etch stop layer

ADVANCED MICRO DEVICES INC19 citations84
US6380091B1Apr 30, 2002

Dual damascene arrangement for metal interconnection with oxide dielectric layer and low K dielectric constant layer

ADVANCED MICRO DEVICES INC12 citations74
US6107208AAug 22, 2000

Nitride etch using N2 /Ar/CHF3 chemistry

ADVANCED MICRO DEVICES INC14 citations74
US6649525B1Nov 18, 2003

Methods and systems for controlling resist residue defects at gate layer in a semiconductor device manufacturing process

ADVANCED MICRO DEVICES INC7 citations69
US6756300B1Jun 29, 2004

Method for forming dual damascene interconnect structure

ADVANCED MICRO DEVICES INC6 citations63
US6759179B1Jul 6, 2004

Methods and systems for controlling resist residue defects at gate layer in a semiconductor device manufacturing process

ADVANCED MICRO DEVICES INC2 citations58

ATLASSIAN PTY LTD

11 patents

CHENG JERRY

2 patents

GHANEKAR JOY

1 patent

VMWARE INC

1 patent