Inventor
CHAN SIMON S
US54 patents
⚠️ This page may combine multiple inventors who share the name “CHAN SIMON S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
34 patentsUS6124203ASep 26, 2000
Method for forming conformal barrier layers
ADVANCED MICRO DEVICES INC107 citations98
US6642119B1Nov 4, 2003
Silicide MOSFET architecture and method of manufacture
ADVANCED MICRO DEVICES INC61 citations96
US6472317B1Oct 29, 2002
Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layers
ADVANCED MICRO DEVICES INC43 citations96
US6312874B1Nov 6, 2001
Method for forming a dual damascene trench and underlying borderless via in low dielectric constant materials
ADVANCED MICRO DEVICES INC71 citations96
US6259115B1Jul 10, 2001
Dummy patterning for semiconductor manufacturing processes
ADVANCED MICRO DEVICES INC69 citations96
US6143672ANov 7, 2000
Method of reducing metal voidings in 0.25 μm AL interconnect
ADVANCED MICRO DEVICES INC65 citations96
US5670828ASep 23, 1997
Tunneling technology for reducing intra-conductive layer capacitance
ADVANCED MICRO DEVICES INC80 citations96
US6518173B1Feb 11, 2003
Method for avoiding fluorine contamination of copper interconnects
ADVANCED MICRO DEVICES INC35 citations93
US6291339B1Sep 18, 2001
Bilayer interlayer dielectric having a substantially uniform composite interlayer dielectric constant over pattern features of varying density and method of making the same
ADVANCED MICRO DEVICES INC19 citations93
US6156643ADec 5, 2000
Method of forming a dual damascene trench and borderless via structure
ADVANCED MICRO DEVICES INC41 citations93
US6093635AJul 25, 2000
High integrity borderless vias with HSQ gap filled patterned conductive layers
ADVANCED MICRO DEVICES INC27 citations93
US5861677AJan 19, 1999
Low RC interconnection
ADVANCED MICRO DEVICES INC18 citations93
US6967160B1Nov 22, 2005
Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness
ADVANCED MICRO DEVICES INC18 citations92
US6867130B1Mar 15, 2005
Enhanced silicidation of polysilicon gate electrodes
ADVANCED MICRO DEVICES INC45 citations92
US6689688B2Feb 10, 2004
Method and device using silicide contacts for semiconductor processing
ADVANCED MICRO DEVICES INC21 citations92
US6255735B1Jul 3, 2001
Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layers
ADVANCED MICRO DEVICES INC16 citations92
US5814560ASep 29, 1998
Metallization sidewall passivation technology for deep sub-half micrometer IC applications
ADVANCED MICRO DEVICES INC17 citations84
US6873051B1Mar 29, 2005
Nickel silicide with reduced interface roughness
ADVANCED MICRO DEVICES INC11 citations74
US6204136B1Mar 20, 2001
Post-spacer etch surface treatment for improved silicide formation
ADVANCED MICRO DEVICES INC11 citations74
US6200913B1Mar 13, 2001
Cure process for manufacture of low dielectric constant interlevel dielectric layers
ADVANCED MICRO DEVICES INC9 citations74
US6171919B1Jan 9, 2001
MOS Transistor formation process including post-spacer etch surface treatment for improved silicide formation
ADVANCED MICRO DEVICES INC11 citations74
US5843836ADec 1, 1998
Tunneling technology for reducing intra-conductive layer capacitance
ADVANCED MICRO DEVICES INC13 citations74
US6368949B1Apr 9, 2002
Post-spacer etch surface treatment for improved silicide formation
ADVANCED MICRO DEVICES INC13 citations73
US6333263B1Dec 25, 2001
Method of reducing stress corrosion induced voiding of patterned metal layers
ADVANCED MICRO DEVICES INC7 citations73
US6258683B1Jul 10, 2001
Local interconnection arrangement with reduced junction leakage and method of forming same
ADVANCED MICRO DEVICES INC11 citations73
US5888898AMar 30, 1999
HSQ baking for reduced dielectric constant
ADVANCED MICRO DEVICES INC8 citations72
US7223640B2May 29, 2007
Semiconductor component and method of manufacture
ADVANCED MICRO DEVICES INC6 citations63
US7144818B2Dec 5, 2006
Semiconductor substrate and processes therefor
ADVANCED MICRO DEVICES INC2 citations63
US6355575B1Mar 12, 2002
Semiconductor device and method of manufacturing without damaging HSQ layer and metal pattern
ADVANCED MICRO DEVICES INC3 citations63
US6140706AOct 31, 2000
Semiconductor device and method of manufacturing without damaging HSQ layer and metal pattern utilizing multiple dielectric layers
ADVANCED MICRO DEVICES INC4 citations63
US7498222B1Mar 3, 2009
Enhanced etching of a high dielectric constant layer
ADVANCED MICRO DEVICES INC6 citations62
US7465644B1Dec 16, 2008
Isolation region bird's beak suppression
ADVANCED MICRO DEVICES INC5 citations62
US6251776B1Jun 26, 2001
Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers
ADVANCED MICRO DEVICES INC4 citations62
US7265420B2Sep 4, 2007
Semiconductor substrate layer configured for inducement of compressive or expansive force
ADVANCED MICRO DEVICES INC0 citations52
SPANSION LLC
5 patentsUS7879718B2Feb 1, 2011
Local interconnect having increased misalignment tolerance
SPANSION LLC13 citations93
US7446369B2Nov 4, 2008
SONOS memory cell having high-K dielectric
SPANSION LLC2 citations62
US7242102B2Jul 10, 2007
Bond pad structure for copper metallization having increased reliability and method for fabricating same
SPANSION LLC6 citations62
US7538383B1May 26, 2009
Two-bit memory cell having conductive charge storage segments and method for fabricating same
SPANSION LLC1 citations52
US7381620B1Jun 3, 2008
Oxygen elimination for device processing
SPANSION LLC0 citations52
AVANTEK
4 patentsUS4842699AJun 27, 1989
Method of selective via-hole and heat sink plating using a metal mask
AVANTEK145 citations96
US4978639ADec 18, 1990
Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips
AVANTEK177 citations95
US4808273AFeb 28, 1989
Method of forming completely metallized via holes in semiconductors
AVANTEK117 citations95
US5288660AFeb 22, 1994
Method for forming self-aligned t-shaped transistor electrode
AVANTEK50 citations89
CYPRESS SEMICONDUCTOR CORP
4 patentsUS10692877B2Jun 23, 2020
Non-volatile memory with silicided bit line contacts
CYPRESS SEMICONDUCTOR CORP0 citations52
US9673206B2Jun 6, 2017
Buried hard mask for embedded semiconductor device patterning
CYPRESS SEMICONDUCTOR CORP0 citations51
US9431503B2Aug 30, 2016
Integrating transistors with different poly-silicon heights on the same die
CYPRESS SEMICONDUCTOR CORP0 citations51
US9318498B2Apr 19, 2016
Buried hard mask for embedded semiconductor device patterning
CYPRESS SEMICONDUCTOR CORP0 citations51
ADVANCED MICRO DEVICS INC
1 patentLIN CHUAN
1 patentCHAN SIMON S
1 patentShowing the top 50 of 54 patents by PatentIndex Score.