P

Inventor

CHAN SIMON S

US54 patents
⚠️ This page may combine multiple inventors who share the name “CHAN SIMON S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

34 patents
US6124203ASep 26, 2000

Method for forming conformal barrier layers

ADVANCED MICRO DEVICES INC107 citations98
US6642119B1Nov 4, 2003

Silicide MOSFET architecture and method of manufacture

ADVANCED MICRO DEVICES INC61 citations96
US6472317B1Oct 29, 2002

Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layers

ADVANCED MICRO DEVICES INC43 citations96
US6312874B1Nov 6, 2001

Method for forming a dual damascene trench and underlying borderless via in low dielectric constant materials

ADVANCED MICRO DEVICES INC71 citations96
US6259115B1Jul 10, 2001

Dummy patterning for semiconductor manufacturing processes

ADVANCED MICRO DEVICES INC69 citations96
US6143672ANov 7, 2000

Method of reducing metal voidings in 0.25 μm AL interconnect

ADVANCED MICRO DEVICES INC65 citations96
US5670828ASep 23, 1997

Tunneling technology for reducing intra-conductive layer capacitance

ADVANCED MICRO DEVICES INC80 citations96
US6518173B1Feb 11, 2003

Method for avoiding fluorine contamination of copper interconnects

ADVANCED MICRO DEVICES INC35 citations93
US6291339B1Sep 18, 2001

Bilayer interlayer dielectric having a substantially uniform composite interlayer dielectric constant over pattern features of varying density and method of making the same

ADVANCED MICRO DEVICES INC19 citations93
US6156643ADec 5, 2000

Method of forming a dual damascene trench and borderless via structure

ADVANCED MICRO DEVICES INC41 citations93
US6093635AJul 25, 2000

High integrity borderless vias with HSQ gap filled patterned conductive layers

ADVANCED MICRO DEVICES INC27 citations93
US5861677AJan 19, 1999

Low RC interconnection

ADVANCED MICRO DEVICES INC18 citations93
US6967160B1Nov 22, 2005

Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness

ADVANCED MICRO DEVICES INC18 citations92
US6867130B1Mar 15, 2005

Enhanced silicidation of polysilicon gate electrodes

ADVANCED MICRO DEVICES INC45 citations92
US6689688B2Feb 10, 2004

Method and device using silicide contacts for semiconductor processing

ADVANCED MICRO DEVICES INC21 citations92
US6255735B1Jul 3, 2001

Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layers

ADVANCED MICRO DEVICES INC16 citations92
US5814560ASep 29, 1998

Metallization sidewall passivation technology for deep sub-half micrometer IC applications

ADVANCED MICRO DEVICES INC17 citations84
US6873051B1Mar 29, 2005

Nickel silicide with reduced interface roughness

ADVANCED MICRO DEVICES INC11 citations74
US6204136B1Mar 20, 2001

Post-spacer etch surface treatment for improved silicide formation

ADVANCED MICRO DEVICES INC11 citations74
US6200913B1Mar 13, 2001

Cure process for manufacture of low dielectric constant interlevel dielectric layers

ADVANCED MICRO DEVICES INC9 citations74
US6171919B1Jan 9, 2001

MOS Transistor formation process including post-spacer etch surface treatment for improved silicide formation

ADVANCED MICRO DEVICES INC11 citations74
US5843836ADec 1, 1998

Tunneling technology for reducing intra-conductive layer capacitance

ADVANCED MICRO DEVICES INC13 citations74
US6368949B1Apr 9, 2002

Post-spacer etch surface treatment for improved silicide formation

ADVANCED MICRO DEVICES INC13 citations73
US6333263B1Dec 25, 2001

Method of reducing stress corrosion induced voiding of patterned metal layers

ADVANCED MICRO DEVICES INC7 citations73
US6258683B1Jul 10, 2001

Local interconnection arrangement with reduced junction leakage and method of forming same

ADVANCED MICRO DEVICES INC11 citations73
US5888898AMar 30, 1999

HSQ baking for reduced dielectric constant

ADVANCED MICRO DEVICES INC8 citations72
US7223640B2May 29, 2007

Semiconductor component and method of manufacture

ADVANCED MICRO DEVICES INC6 citations63
US7144818B2Dec 5, 2006

Semiconductor substrate and processes therefor

ADVANCED MICRO DEVICES INC2 citations63
US6355575B1Mar 12, 2002

Semiconductor device and method of manufacturing without damaging HSQ layer and metal pattern

ADVANCED MICRO DEVICES INC3 citations63
US6140706AOct 31, 2000

Semiconductor device and method of manufacturing without damaging HSQ layer and metal pattern utilizing multiple dielectric layers

ADVANCED MICRO DEVICES INC4 citations63
US7498222B1Mar 3, 2009

Enhanced etching of a high dielectric constant layer

ADVANCED MICRO DEVICES INC6 citations62
US7465644B1Dec 16, 2008

Isolation region bird's beak suppression

ADVANCED MICRO DEVICES INC5 citations62
US6251776B1Jun 26, 2001

Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers

ADVANCED MICRO DEVICES INC4 citations62
US7265420B2Sep 4, 2007

Semiconductor substrate layer configured for inducement of compressive or expansive force

ADVANCED MICRO DEVICES INC0 citations52

SPANSION LLC

5 patents

AVANTEK

4 patents

CYPRESS SEMICONDUCTOR CORP

4 patents

ADVANCED MICRO DEVICS INC

1 patent

LIN CHUAN

1 patent

CHAN SIMON S

1 patent

Showing the top 50 of 54 patents by PatentIndex Score.