Inventor
NAKAZAWA TSUTOMU
JP17 patents
⚠️ This page may combine multiple inventors who share the name “NAKAZAWA TSUTOMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
7 patentsUS5648682AJul 15, 1997
Resin-sealed semiconductor device and lead frame used in a resin-sealed semiconductor device
TOSHIBA KK113 citations96
US5401688AMar 28, 1995
Semiconductor device of multichip module-type
TOSHIBA KK55 citations93
US5733802AMar 31, 1998
Semiconductor device and method of manufacturing the same
TOSHIBA KK40 citations91
US5684327ANov 4, 1997
Lead frame for use in a resin-sealed type semiconductor device
TOSHIBA KK31 citations91
US5191403AMar 2, 1993
Resin-sealed semiconductor device having a particular mold resin structure
TOSHIBA KK19 citations82
US5248895ASep 28, 1993
Semiconductor apparatus having resin encapsulated tab tape connections
TOSHIBA KK17 citations73
US5757066AMay 26, 1998
Resin-molded type semiconductor device and method of manufacturing the same
TOSHIBA KK12 citations72
SANYO ELECTRIC CO
6 patentsUS6297746B1Oct 2, 2001
Centralized apparatus control system for controlling a plurality of electrical apparatuses
SANYO ELECTRIC CO131 citations95
US5299010AMar 29, 1994
Channel display device for receivable channels
SANYO ELECTRIC CO26 citations90
US7143948B2Dec 5, 2006
Reading method of the two-dimensional bar code
SANYO ELECTRIC CO20 citations89
US7106902B2Sep 12, 2006
Personal authentication system and method thereof
SANYO ELECTRIC CO14 citations80
US7255274B2Aug 14, 2007
Data exchanging system, device, and method, all utilizing IC chip
SANYO ELECTRIC CO2 citations62
US7202787B2Apr 10, 2007
Non-authentic article discrimination system, and method for discriminating non-authentic article
SANYO ELECTRIC CO0 citations41
FUJITSU LTD
3 patentsUS5518937AMay 21, 1996
Semiconductor device having a region doped to a level exceeding the solubility limit
FUJITSU LTD26 citations92
US5270224ADec 14, 1993
Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit
FUJITSU LTD41 citations92
US5111266AMay 5, 1992
Semiconductor device having a region doped to a level exceeding the solubility limit
FUJITSU LTD38 citations92