Inventor
GANITZER PAUL
AT23 patents
⚠️ This page may combine multiple inventors who share the name “GANITZER PAUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
10 patentsUS11302579B2Apr 12, 2022
Composite wafer, semiconductor device and electronic component
INFINEON TECHNOLOGIES AG1 citations72
US10672664B2Jun 2, 2020
Composite wafer, semiconductor device, electronic component and method of manufacturing a semiconductor device
INFINEON TECHNOLOGIES AG2 citations72
US11848237B2Dec 19, 2023
Composite wafer, semiconductor device and electronic component
INFINEON TECHNOLOGIES AG0 citations62
US11552016B2Jan 10, 2023
Semiconductor device with metallization structure on opposite sides of a semiconductor portion
INFINEON TECHNOLOGIES AG0 citations62
US10971449B2Apr 6, 2021
Semiconductor device with metallization structure on opposite sides of a semiconductor portion
INFINEON TECHNOLOGIES AG0 citations62
US9397055B2Jul 19, 2016
Processing of thick metal pads
INFINEON TECHNOLOGIES AG2 citations62
US10573533B2Feb 25, 2020
Method of reducing a sheet resistance in an electronic device, and an electronic device
INFINEON TECHNOLOGIES AG1 citations57
US10593623B2Mar 17, 2020
Semiconductor device with metallization structure on opposite sides of a semiconductor portion
INFINEON TECHNOLOGIES AG0 citations52
US9673157B2Jun 6, 2017
Processing of thick metal pads
INFINEON TECHNOLOGIES AG0 citations51
US9006899B2Apr 14, 2015
Layer stack
INFINEON TECHNOLOGIES AG0 citations50
INFINEON TECHNOLOGIES AUSTRIA AG
5 patentsUS12087717B2Sep 10, 2024
Semiconductor package and methods of manufacturing a semiconductor package
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11081457B2Aug 3, 2021
Semiconductor package and methods of manufacturing a semiconductor package
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US9935055B2Apr 3, 2018
Methods of manufacturing a semiconductor device by forming a separation trench
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9461004B2Oct 4, 2016
Semiconductor workpiece having a semiconductor substrate with at least two chip areas
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9887152B2Feb 6, 2018
Method for manufacturing semiconductor devices having a metallisation layer
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
INFINEON TECHNOLOGIES AUSTRIA
3 patentsUS7851349B2Dec 14, 2010
Method for producing a connection electrode for two semiconductor zones arranged one above another
INFINEON TECHNOLOGIES AUSTRIA15 citations84
US9070741B2Jun 30, 2015
Method of manufacturing a semiconductor device and a semiconductor workpiece
INFINEON TECHNOLOGIES AUSTRIA2 citations62
US9030028B2May 12, 2015
Method for manufacturing semiconductor devices having a metallisation layer
INFINEON TECHNOLOGIES AUSTRIA0 citations51