Inventor
MERCHANT STEVEN L
US25 patents
⚠️ This page may combine multiple inventors who share the name “MERCHANT STEVEN L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
10 patentsUS6700160B1Mar 2, 2004
Double-diffused MOS (DMOS) power transistor with a channel compensating implant
TEXAS INSTRUMENTS INC31 citations92
US7417270B2Aug 26, 2008
Distributed high voltage JFET
TEXAS INSTRUMENTS INC9 citations82
US7846789B2Dec 7, 2010
Isolation trench with rounded corners for BiCMOS process
TEXAS INSTRUMENTS INC6 citations74
US6815276B2Nov 9, 2004
Segmented power MOSFET of safe operation
TEXAS INSTRUMENTS INC10 citations74
US7605412B2Oct 20, 2009
Distributed high voltage JFET
TEXAS INSTRUMENTS INC7 citations72
US6800917B2Oct 5, 2004
Bladed silicon-on-insulator semiconductor devices and method of making
TEXAS INSTRUMENTS INC10 citations71
US7187034B2Mar 6, 2007
Distributed power MOSFET
TEXAS INSTRUMENTS INC3 citations63
US7736961B2Jun 15, 2010
High voltage depletion FET employing a channel stopping implant
TEXAS INSTRUMENTS INC3 citations60
US6797547B2Sep 28, 2004
Bladed silicon-on-insulator semiconductor devices and method of making
TEXAS INSTRUMENTS INC2 citations60
US7910417B2Mar 22, 2011
Distributed high voltage JFET
TEXAS INSTRUMENTS INC0 citations50
PHILIPS CORP
6 patentsUS5767547AJun 16, 1998
High voltage thin film transistor having a linear doping profile
PHILIPS CORP49 citations96
US5300448AApr 5, 1994
High voltage thin film transistor having a linear doping profile and method for making
PHILIPS CORP72 citations96
US5246870ASep 21, 1993
Method for making an improved high voltage thin film transistor having a linear doping profile
PHILIPS CORP93 citations96
US5113236AMay 12, 1992
Integrated circuit device particularly adapted for high voltage applications
PHILIPS CORP53 citations96
US5213986AMay 25, 1993
Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning
PHILIPS CORP98 citations95
US5648671AJul 15, 1997
Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile
PHILIPS CORP37 citations92
MOTOROLA INC
5 patentsUS6140184AOct 31, 2000
Method of changing the power dissipation across an array of transistors
MOTOROLA INC25 citations90
US6150200ANov 21, 2000
Semiconductor device and method of making
MOTOROLA INC17 citations84
US6603157B2Aug 5, 2003
Field effect transistor having differing power dissipation across an array of transistors
MOTOROLA INC10 citations71
US6096606AAug 1, 2000
Method of making a semiconductor device
MOTOROLA INC6 citations63
US6423991B1Jul 23, 2002
Field effect transistor and method of making
MOTOROLA INC0 citations50
PHILIPS ELECTRONICS NA
3 patentsUS5412241AMay 2, 1995
Method for making an improved high voltage thin film transistor having a linear doping profile
PHILIPS ELECTRONICS NA58 citations96
US5710451AJan 20, 1998
High-voltage lateral MOSFET SOI device having a semiconductor linkup region
PHILIPS ELECTRONICS NA47 citations92
US5362979ANov 8, 1994
SOI transistor with improved source-high performance
PHILIPS ELECTRONICS NA50 citations92