Inventor

SAMATA SHUICHI

JP32 patents

⚠️ This page may combine multiple inventors who share the name “SAMATA SHUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMATA SHUICHI

TOSHIBA KK

Vapor phase epitaxial growth apparatus

Semiconductor substrate containing bulk micro-defect

Filling contact hole with selectively deposited EPI and poly silicon

Semiconductor silicon wafer and process for producing it

Process for producing Semiconductor silicon wafer

Method for diagnosing failure of a manufacturing apparatus and a failure diagnosis system

Method for predicting life of rotary machine and determining repair timing of rotary machine

Method for predicting life span of rotary machine used in manufacturing apparatus and life predicting system

Semiconductor substrate and method of manufacturing same

Method of making a through hole in multi-layer insulating films

Semiconductor device silicon via fill formed in multiple dielectric layers

Manufacturing method of semiconductor substrate and inspection method therefor

Apparatus for predicting life of rotary machine and equipment using the same

Method for avoiding irregular shutoff of production equipment and system for avoiding irregular shutoff

Method for diagnosing life of manufacturing equipment using rotary machine

Semiconductor device with improved wiring contact portion

System, method and program for designing a utility facility and method for manufacturing a product by the utility facility

Manufacturing apparatus and method for predicting life of a manufacturing apparatus which uses a rotary machine

Method of manufacturing a semiconductor device having improved contact resistance characteristics

Preparation method of selective growth silicon layer doped with impurities

Method for manufacturing semiconductor device having gate electrodes of different conductivity types

Method of growing a resistive epitaxial layer on a short lifetime epi-layer

System for analyzing metal impurity on the surface of a single crystal semiconductor by using total reflection of x-rays fluorescence

Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate

System for predicting life of a rotary machine, method for predicting life of a manufacturing apparatus which uses a rotary machine and a manufacturing apparatus

Method for manufacturing a semiconductor device including pre-oxidation process

SUMCO CORP

Method of evaluating carbon concentration of silicon sample, method of evaluating silicon wafer manufacturing process, method of manufacturing silicon wafer, method of manufacturing silicon single crystal ingot, silicon single crystal ingot and silicon wafer

Method of measuring carbon concentration of silicon sample, method of manufacturing silicon single crystal ingot, silicon single crystal ingot and silicon wafer

Method of evaluating silicon layer and a method of manufacturing silicon epitaxial wafer

Method of evaluating manufacturing process of silicon material and manufacturing method of silicon material

TOBSHIBA KK

Semiconductor device and its manufacturing method

MITSUGI NORITOMO

Method of removing heavy metal in semiconductor substrate