Inventor
KAISE TSUNEYUKI
JP7 patents
Patents
7 patentsUS6184049B1Feb 6, 2001
Method for fabricating compound semiconductor epitaxial wafer and vapor phase growth apparatus using the same
SHINETSU HANDOTAI KK7 citations73
US6048397AApr 11, 2000
GaAsP epitaxial wafer and a method for manufacturing it
SHINETSU HANDOTAI KK9 citations72
US6057592AMay 2, 2000
Compound semiconductor epitaxial wafer
SHINETSU HANDOTAI KK10 citations71
US5912476AJun 15, 1999
Compound semiconductor epitaxial wafer
SHINETSU HANDOTAI KK10 citations71
US5302839AApr 12, 1994
Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon
SHINETSU HANDOTAI KK7 citations71
US6171394B1Jan 9, 2001
Method for manufacturing compound semiconductor epitaxial wafer
SHINETSU HANDOTAI KK6 citations62
US5759264AJun 2, 1998
Method for vapor-phase growth
SHINETSU HANDOTAI KK4 citations62