Inventor
YAU WAI-FAN
US60 patents
⚠️ This page may combine multiple inventors who share the name “YAU WAI-FAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
46 patentsUS6627532B1Sep 30, 2003
Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
APPLIED MATERIALS INC358 citations99
US6596655B1Jul 22, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC77 citations99
US6593247B1Jul 15, 2003
Method of depositing low k films using an oxidizing plasma
APPLIED MATERIALS INC129 citations99
US6562690B1May 13, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC102 citations99
US6541282B1Apr 1, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC80 citations99
US6511903B1Jan 28, 2003
Method of depositing a low k dielectric with organo silane
APPLIED MATERIALS INC91 citations99
US6511909B1Jan 28, 2003
Method of depositing a low K dielectric with organo silane
APPLIED MATERIALS INC100 citations99
US6413583B1Jul 2, 2002
Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
APPLIED MATERIALS INC725 citations99
US6348725B2Feb 19, 2002
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC161 citations99
US6303523B2Oct 16, 2001
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC751 citations99
US6171945B1Jan 9, 2001
CVD nanoporous silica low dielectric constant films
APPLIED MATERIALS INC317 citations99
US6072227AJun 6, 2000
Low power method of depositing a low k dielectric with organo silane
APPLIED MATERIALS INC541 citations99
US6054379AApr 25, 2000
Method of depositing a low k dielectric with organo silane
APPLIED MATERIALS INC609 citations99
US6660656B2Dec 9, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC111 citations98
US6537929B1Mar 25, 2003
CVD plasma assisted low dielectric constant films
APPLIED MATERIALS INC118 citations98
US6340435B1Jan 22, 2002
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC536 citations98
US6287990B1Sep 11, 2001
CVD plasma assisted low dielectric constant films
APPLIED MATERIALS INC233 citations98
US6245690B1Jun 12, 2001
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC132 citations98
US6858153B2Feb 22, 2005
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC256 citations97
US6734115B2May 11, 2004
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC67 citations97
US6448187B2Sep 10, 2002
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC98 citations97
US7023092B2Apr 4, 2006
Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
APPLIED MATERIALS INC25 citations96
US6869896B2Mar 22, 2005
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC37 citations96
US6770556B2Aug 3, 2004
Method of depositing a low dielectric with organo silane
APPLIED MATERIALS INC29 citations96
US6730593B2May 4, 2004
Method of depositing a low K dielectric with organo silane
APPLIED MATERIALS INC60 citations96
US6562544B1May 13, 2003
Method and apparatus for improving accuracy in photolithographic processing of substrates
APPLIED MATERIALS INC53 citations96
US6209484B1Apr 3, 2001
Method and apparatus for depositing an etch stop layer
APPLIED MATERIALS INC74 citations96
US6156149ADec 5, 2000
In situ deposition of a dielectric oxide layer and anti-reflective coating
APPLIED MATERIALS INC71 citations96
US6127262AOct 3, 2000
Method and apparatus for depositing an etch stop layer
APPLIED MATERIALS INC49 citations96
US6035803AMar 14, 2000
Method and apparatus for controlling the deposition of a fluorinated carbon film
APPLIED MATERIALS INC94 citations96
US5968324AOct 19, 1999
Method and apparatus for depositing antireflective coating
APPLIED MATERIALS INC85 citations96
US6800571B2Oct 5, 2004
CVD plasma assisted low dielectric constant films
APPLIED MATERIALS INC54 citations95
US6743737B2Jun 1, 2004
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC39 citations95
US6669858B2Dec 30, 2003
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC47 citations95
US6660663B1Dec 9, 2003
Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds
APPLIED MATERIALS INC62 citations95
US6083852AJul 4, 2000
Method for applying films using reduced deposition rates
APPLIED MATERIALS INC69 citations95
US7658969B2Feb 9, 2010
Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
APPLIED MATERIALS INC19 citations92
US7560377B2Jul 14, 2009
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC19 citations92
US7320942B2Jan 22, 2008
Method for removal of metallic residue after plasma etching of a metal layer
APPLIED MATERIALS INC19 citations92
US7227244B2Jun 5, 2007
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC27 citations92
US7205249B2Apr 17, 2007
CVD plasma assisted low dielectric constant films
APPLIED MATERIALS INC32 citations92
US7160821B2Jan 9, 2007
Method of depositing low k films
APPLIED MATERIALS INC25 citations92
US7070657B1Jul 4, 2006
Method and apparatus for depositing antireflective coating
APPLIED MATERIALS INC24 citations92
US6930061B2Aug 16, 2005
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC32 citations92
US6806207B2Oct 19, 2004
Method of depositing low K films
APPLIED MATERIALS INC34 citations92
US6784119B2Aug 31, 2004
Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition
APPLIED MATERIALS INC36 citations92
NOVELLUS SYSTEMS INC
3 patentsWANG FENG
1 patentShowing the top 50 of 60 patents by PatentIndex Score.