Inventor
LU YUNG-CHENG
US145 patents
⚠️ This page may combine multiple inventors who share the name “LU YUNG-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
21 patentsUS6627532B1Sep 30, 2003
Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
APPLIED MATERIALS INC358 citations99
US6596655B1Jul 22, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC77 citations99
US6593247B1Jul 15, 2003
Method of depositing low k films using an oxidizing plasma
APPLIED MATERIALS INC129 citations99
US6562690B1May 13, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC102 citations99
US6541282B1Apr 1, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC80 citations99
US6348725B2Feb 19, 2002
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC161 citations99
US6303523B2Oct 16, 2001
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC751 citations99
US6660656B2Dec 9, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC111 citations98
US6245690B1Jun 12, 2001
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC132 citations98
US6734115B2May 11, 2004
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC67 citations97
US6448187B2Sep 10, 2002
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC98 citations97
US7023092B2Apr 4, 2006
Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
APPLIED MATERIALS INC25 citations96
US6869896B2Mar 22, 2005
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC37 citations96
US6743737B2Jun 1, 2004
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC39 citations95
US7560377B2Jul 14, 2009
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC19 citations92
US7160821B2Jan 9, 2007
Method of depositing low k films
APPLIED MATERIALS INC25 citations92
US6930061B2Aug 16, 2005
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC32 citations92
US6806207B2Oct 19, 2004
Method of depositing low K films
APPLIED MATERIALS INC34 citations92
US6784119B2Aug 31, 2004
Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition
APPLIED MATERIALS INC36 citations92
US6632735B2Oct 14, 2003
Method of depositing low dielectric constant carbon doped silicon oxide
APPLIED MATERIALS INC37 citations92
US7074708B2Jul 11, 2006
Method of decreasing the k value in sioc layer deposited by chemical vapor deposition
APPLIED MATERIALS INC8 citations74
TAIWAN SEMICONDUCTOR MFG
14 patentsUS6602779B1Aug 5, 2003
Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layer
TAIWAN SEMICONDUCTOR MFG225 citations99
US8053356B2Nov 8, 2011
Interconnect structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG9 citations92
US7312531B2Dec 25, 2007
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG22 citations92
US7217648B2May 15, 2007
Post-ESL porogen burn-out for copper ELK integration
TAIWAN SEMICONDUCTOR MFG23 citations92
US6958524B2Oct 25, 2005
Insulating layer having graded densification
TAIWAN SEMICONDUCTOR MFG22 citations92
US6756321B2Jun 29, 2004
Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant
TAIWAN SEMICONDUCTOR MFG49 citations91
US9318447B2Apr 19, 2016
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG6 citations84
US7723226B2May 25, 2010
Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio
TAIWAN SEMICONDUCTOR MFG11 citations84
US7638859B2Dec 29, 2009
Interconnects with harmonized stress and methods for fabricating the same
TAIWAN SEMICONDUCTOR MFG10 citations84
US7129164B2Oct 31, 2006
Method for forming a multi-layer low-K dual damascene
TAIWAN SEMICONDUCTOR MFG11 citations84
US7074727B2Jul 11, 2006
Process for improving dielectric properties in low-k organosilicate dielectric material
TAIWAN SEMICONDUCTOR MFG17 citations84
US7056826B2Jun 6, 2006
Method of forming copper interconnects
TAIWAN SEMICONDUCTOR MFG11 citations84
US7244673B2Jul 17, 2007
Integration film scheme for copper / low-k interconnect
TAIWAN SEMICONDUCTOR MFG12 citations82
US7642189B2Jan 5, 2010
Synergy effect of alloying materials in interconnect structures
TAIWAN SEMICONDUCTOR MFG6 citations74
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS11923432B2Mar 5, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11107902B2Aug 31, 2021
Dielectric spacer to prevent contacting shorting
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9987720B2Jun 5, 2018
Method for operating a polishing head and method for polishing a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9768024B1Sep 19, 2017
Multi-layer mask and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9352443B2May 31, 2016
Platen assembly, chemical-mechanical polisher, and method for polishing substrate
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations84
US9236446B2Jan 12, 2016
Barc-assisted process for planar recessing or removing of variable-height layers
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9917017B2Mar 13, 2018
Replacement gate process for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US11664441B2May 30, 2023
Nanosheet field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11916132B2Feb 27, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11710782B2Jul 25, 2023
Post-formation mends of dielectric features
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11444177B2Sep 13, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11437492B2Sep 6, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11342444B2May 24, 2022
Dielectric spacer to prevent contacting shorting
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11316034B2Apr 26, 2022
Post-formation mends of dielectric features
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
YU CHEN-HUA
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