Inventor
MOGHADAM FARHAD
US33 patents
⚠️ This page may combine multiple inventors who share the name “MOGHADAM FARHAD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
30 patentsUS6596655B1Jul 22, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC77 citations99
US6583071B1Jun 24, 2003
Ultrasonic spray coating of liquid precursor for low K dielectric coatings
APPLIED MATERIALS INC146 citations99
US6562690B1May 13, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC102 citations99
US6541282B1Apr 1, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC80 citations99
US6348725B2Feb 19, 2002
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC161 citations99
US6303523B2Oct 16, 2001
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC751 citations99
US6660656B2Dec 9, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC111 citations98
US6245690B1Jun 12, 2001
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC132 citations98
US6170428B1Jan 9, 2001
Symmetric tunable inductively coupled HDP-CVD reactor
APPLIED MATERIALS INC430 citations98
US6734115B2May 11, 2004
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC67 citations97
US6448187B2Sep 10, 2002
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC98 citations97
US6936551B2Aug 30, 2005
Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
APPLIED MATERIALS INC52 citations96
US6869896B2Mar 22, 2005
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC37 citations96
US6706138B2Mar 16, 2004
Adjustable dual frequency voltage dividing plasma reactor
APPLIED MATERIALS INC56 citations96
US6383954B1May 7, 2002
Process gas distribution for forming stable fluorine-doped silicate glass and other films
APPLIED MATERIALS INC90 citations96
US6743737B2Jun 1, 2004
Method of improving moisture resistance of low dielectric constant films
APPLIED MATERIALS INC39 citations95
US7256139B2Aug 14, 2007
Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices
APPLIED MATERIALS INC46 citations94
US6926926B2Aug 9, 2005
Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
APPLIED MATERIALS INC21 citations93
US7560377B2Jul 14, 2009
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC19 citations92
US6930061B2Aug 16, 2005
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC32 citations92
US6632735B2Oct 14, 2003
Method of depositing low dielectric constant carbon doped silicon oxide
APPLIED MATERIALS INC37 citations92
US6511923B1Jan 28, 2003
Deposition of stable dielectric films
APPLIED MATERIALS INC42 citations92
US6410457B1Jun 25, 2002
Method for improving barrier layer adhesion to HDP-FSG thin films
APPLIED MATERIALS INC17 citations92
US6521546B1Feb 18, 2003
Method of making a fluoro-organosilicate layer
APPLIED MATERIALS INC14 citations84
US7431585B2Oct 7, 2008
Apparatus and method for heating substrates
APPLIED MATERIALS INC14 citations83
US7381052B2Jun 3, 2008
Apparatus and method for heating substrates
APPLIED MATERIALS INC14 citations83
US6803325B2Oct 12, 2004
Apparatus for improving barrier layer adhesion to HDP-FSG thin films
APPLIED MATERIALS INC12 citations73
US11631583B2Apr 18, 2023
RF power source operation in plasma enhanced processes
APPLIED MATERIALS INC0 citations62
US6667248B2Dec 23, 2003
Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers
APPLIED MATERIALS INC6 citations62
US12136537B2Nov 5, 2024
Cost effective radio frequency impedance matching networks
APPLIED MATERIALS INC0 citations52
INTEL CORP
3 patentsUS5260236ANov 9, 1993
UV transparent oxynitride deposition in single wafer PECVD system
INTEL CORP63 citations94
US5872401AFeb 16, 1999
Deposition of an inter layer dielectric formed on semiconductor wafer by sub atmospheric CVD
INTEL CORP41 citations92
US5872064AFeb 16, 1999
DSAD process for deposition of inter layer dielectric
INTEL CORP21 citations92