Inventor
HALLE SCOTT D
US26 patents
⚠️ This page may combine multiple inventors who share the name “HALLE SCOTT D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
18 patentsUS6649531B2Nov 18, 2003
Process for forming a damascene structure
IBM87 citations97
US6607984B1Aug 19, 2003
Removable inorganic anti-reflection coating process
IBM42 citations92
US6355567B1Mar 12, 2002
Retrograde openings in thin films
IBM42 citations92
US6153474ANov 28, 2000
Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate
IBM28 citations92
US5877061AMar 2, 1999
Methods for roughening and volume expansion of trench sidewalls to form high capacitance trench cell for high density dram applications
IBM65 citations92
US5691540ANov 25, 1997
Assembly for measuring a trench depth parameter of a workpiece
IBM32 citations92
US7077903B2Jul 18, 2006
Etch selectivity enhancement for tunable etch resistant anti-reflective layer
IBM9 citations74
US7229936B2Jun 12, 2007
Method to reduce photoresist pattern collapse by controlled surface microroughening
IBM8 citations73
US10642161B1May 5, 2020
Baseline overlay control with residual noise reduction
IBM5 citations69
US9059102B2Jun 16, 2015
Metrology marks for unidirectional grating superposition patterning processes
IBM2 citations63
US7993815B2Aug 9, 2011
Line ends forming
IBM3 citations63
US7914975B2Mar 29, 2011
Multiple exposure lithography method incorporating intermediate layer patterning
IBM3 citations63
US7968270B2Jun 28, 2011
Process of making a semiconductor device using multiple antireflective materials
IBM0 citations52
US7749903B2Jul 6, 2010
Gate patterning scheme with self aligned independent gate etch
IBM0 citations52
US7485573B2Feb 3, 2009
Process of making a semiconductor device using multiple antireflective materials
IBM1 citations52
US7268082B2Sep 11, 2007
Highly selective nitride etching employing surface mediated uniform reactive layer films
IBM1 citations52
US10210292B2Feb 19, 2019
Process-metrology reproducibility bands for lithographic photomasks
IBM0 citations48
US9928316B2Mar 27, 2018
Process-metrology reproducibility bands for lithographic photomasks
IBM1 citations48