Inventor

FORSBERG MARKUS

DE9 patents

⚠️ This page may combine multiple inventors who share the name “FORSBERG MARKUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

2 patents

US7547610B2Jun 16, 2009

Method of making a semiconductor device comprising isolation trenches inducing different types of strain

ADVANCED MICRO DEVICES INC11 citations83

US9659928B2May 23, 2017

Semiconductor device having a high-K gate dielectric above an STI region

ADVANCED MICRO DEVICES INC0 citations51

WIATR MACIEJ

2 patents

US8097519B2Jan 17, 2012

SOI device having a substrate diode formed by reduced implantation energy

WIATR MACIEJ3 citations59

US8334573B2Dec 18, 2012

Buried etch stop layer in trench isolation structures for superior surface planarity in densely packed semiconductor devices

WIATR MACIEJ0 citations49

STEPHAN ROLF

1 patent

US8796807B2Aug 5, 2014

Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials

STEPHAN ROLF8 citations78

WEI ANDY

1 patent

US9023712B2May 5, 2015

Method for self-aligned removal of a high-K gate dielectric above an STI region

WEI ANDY0 citations51

GERHARDT MARTIN

1 patent

US8101512B2Jan 24, 2012

Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topography

GERHARDT MARTIN0 citations50

SCHWAN CHRISTOPH

1 patent

US8138571B2Mar 20, 2012

Semiconductor device comprising isolation trenches inducing different types of strain

SCHWAN CHRISTOPH1 citations49

ORION CORP

1 patent

US7173024B2Feb 6, 2007

Compounds having prolyl oligopeptidase inhibitory activity, methods for their preparation and their use

ORION CORP2 citations48