Inventor
SEARSON PETER C
US16 patents
⚠️ This page may combine multiple inventors who share the name “SEARSON PETER C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV JOHNS HOPKINS
7 patentsUS6187165B1Feb 13, 2001
Arrays of semi-metallic bismuth nanowires and fabrication techniques therefor
UNIV JOHNS HOPKINS105 citations97
US6171467B1Jan 9, 2001
Electrochemical-control of abrasive polishing and machining rates
UNIV JOHNS HOPKINS212 citations95
US5637421AJun 10, 1997
Completely polymeric charge storage device and method for producing same
UNIV JOHNS HOPKINS61 citations92
US6309969B1Oct 30, 2001
Copper metallization structure and method of construction
UNIV JOHNS HOPKINS39 citations88
US7132275B2Nov 7, 2006
Multifunctional magnetic nanowires
UNIV JOHNS HOPKINS17 citations83
US6358392B1Mar 19, 2002
Bismuth thin films structure and method of construction
UNIV JOHNS HOPKINS10 citations72
US9932559B2Apr 3, 2018
Platform for creating an artificial blood brain barrier
UNIV JOHNS HOPKINS4 citations68
CANDESCENT TECH CORP
6 patentsUS5913704AJun 22, 1999
Fabrication of electronic devices by method that involves ion tracking
CANDESCENT TECH CORP51 citations96
US6204596B1Mar 20, 2001
Filamentary electron-emission device having self-aligned gate or/and lower conductive/resistive region
CANDESCENT TECH CORP25 citations92
US5766446AJun 16, 1998
Electrochemical removal of material, particularly excess emitter material in electron-emitting device
CANDESCENT TECH CORP52 citations90
US5827099AOct 27, 1998
Use of early formed lift-off layer in fabricating gated electron-emitting devices
CANDESCENT TECH CORP11 citations82
US5851669ADec 22, 1998
Field-emission device that utilizes filamentary electron-emissive elements and typically has self-aligned gate
CANDESCENT TECH CORP8 citations74
US5893967AApr 13, 1999
Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
CANDESCENT TECH CORP8 citations72