Inventor
HOENLEIN WOLFGANG
DE31 patents
⚠️ This page may combine multiple inventors who share the name “HOENLEIN WOLFGANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
12 patentsUS5494832AFeb 27, 1996
Method for manufacturing a solar cell from a substrate wafer
SIEMENS AG102 citations98
US6108191AAug 22, 2000
Multilayer capacitor with high specific capacitance and production process therefor
SIEMENS AG141 citations96
US5188977AFeb 23, 1993
Method for manufacturing an electrically conductive tip composed of a doped semiconductor material
SIEMENS AG59 citations95
US5306647AApr 26, 1994
Method for manufacturing a solar cell from a substrate wafer
SIEMENS AG42 citations93
US5529950AJun 25, 1996
Method for manufacturing a cubically integrated circuit arrangement
SIEMENS AG53 citations92
US5360759ANov 1, 1994
Method for manufacturing a component with porous silicon
SIEMENS AG34 citations92
US5759903AJun 2, 1998
Circuit structure having at least one capacitor and a method for the manufacture thereof
SIEMENS AG28 citations90
US6204119B1Mar 20, 2001
Manufacturing method for a capacitor in an integrated memory circuit
SIEMENS AG19 citations84
US6022786AFeb 8, 2000
Method for manufacturing a capacitor for a semiconductor arrangement
SIEMENS AG15 citations74
US5989972ANov 23, 1999
Capacitor in a semiconductor configuration and process for its production
SIEMENS AG13 citations74
US5365405ANov 15, 1994
Multi-chip module
SIEMENS AG12 citations74
US5449310ASep 12, 1995
Method for manufacturing rod-shaped silicon structures
SIEMENS AG0 citations52
INFINEON TECHNOLOGIES AG
11 patentsUS6798000B2Sep 28, 2004
Field effect transistor
INFINEON TECHNOLOGIES AG251 citations98
US7301779B2Nov 27, 2007
Electronic chip and electronic chip assembly
INFINEON TECHNOLOGIES AG26 citations89
US7321097B2Jan 22, 2008
Electronic component comprising an electrically conductive connection consisting of carbon nanotubes and a method for producing the same
INFINEON TECHNOLOGIES AG16 citations84
US6441424B1Aug 27, 2002
Integrated circuit configuration having at least one capacitor and method for producing the same
INFINEON TECHNOLOGIES AG15 citations84
US6316802B1Nov 13, 2001
Easy to manufacture integrated semiconductor memory configuration with platinum electrodes
INFINEON TECHNOLOGIES AG5 citations63
US6710388B2Mar 23, 2004
Ferroelectric transistor, use thereof in a memory cell configuration and method of producing the ferroelectric transistor
INFINEON TECHNOLOGIES AG2 citations62
US6469887B2Oct 22, 2002
Capacitor for semiconductor configuration and method for fabricating a dielectric layer therefor
INFINEON TECHNOLOGIES AG3 citations62
US6455328B2Sep 24, 2002
Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalum
INFINEON TECHNOLOGIES AG2 citations62
US6894330B2May 17, 2005
Memory configuration and method for reading a state from and storing a state in a ferroelectric transistor
INFINEON TECHNOLOGIES AG4 citations60
US6944044B2Sep 13, 2005
Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrix
INFINEON TECHNOLOGIES AG2 citations58
US6466152B2Oct 15, 2002
Resistor cascade for forming electrical reference quantities and analog/digital converter
INFINEON TECHNOLOGIES AG0 citations52
ADVANCED TECH MATERIALS
3 patentsUS7005303B2Feb 28, 2006
Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
ADVANCED TECH MATERIALS27 citations92
US6730523B2May 4, 2004
Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
ADVANCED TECH MATERIALS17 citations92
US6303391B1Oct 16, 2001
Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
ADVANCED TECH MATERIALS27 citations92