Inventor

ROEDER JEFFREY F

US92 patents

⚠️ This page may combine multiple inventors who share the name “ROEDER JEFFREY F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ROEDER JEFFREY F

ADVANCED TECH MATERIALS

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Apparatus and process for sensing fluoro species in semiconductor processing systems

Apparatus and process for sensing fluoro species in semiconductor processing systems

Apparatus and process for sensing fluoro species in semiconductor processing systems

Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

Liquid delivery MOCVD process for deposition of high frequency dielectric materials

Composition and method for low temperature deposition of silicon-containing films

Chemical vapor deposition process for fabrication of hybrid electrodes

Stress control of thin films by mechanical deformation of wafer substrate

Chemical vapor deposition of high conductivity, adherent thin films of ruthenium

Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material

Composition and method for low temperature deposition of silicon-containing films

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Composition and method for forming thin film ferrite layers on a substrate

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

Supercritical fluid-based cleaning compositions and methods

Composition and method for low temperature deposition of silicon-containing films

Passivative chemical mechanical polishing composition for copper film planarization

Apparatus and process for sensing target gas species in semiconductor processing systems

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices

Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material

Barrier structures for integration of high K oxides with Cu and Al electrodes

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices

Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same

Stress control of thin films by mechanical deformation of wafer substrate

Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom

A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices

Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrate

Low temperature CVD processes for preparing ferroelectric films using Bi amides

Amorphously deposited metal oxide ceramic films

MOCVD of SBT using toluene-based solvent system for precursor delivery

MOCVD of SBT using toluene based solvent system for precursor delivery

MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery

Zirconium-doped BST materials and MOCVD process forming same

Low temperature deposition of phase change memory materials

Tellurium compounds useful for deposition of tellurium containing materials

Antimony and germanium complexes useful for CVD/ALD of metal thin films

IBM

Electroplated solder terminal

Electroplated solder terminal

Etching processes for avoiding edge stress in semiconductor chip solder bumps

HUNKS WILLIAM

Precursors for silicon dioxide gap fill

Antimony and germanium complexes useful for CVD/ALD of metal thin films

WANG ZIYUN

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Composition and method for low temperature deposition of silicon-containing films

ADVANCED TEHNOLOGY MATERIALS I

Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

ENTEGRIS INC

Tellurium compounds useful for deposition of tellurium containing materials

ZHENG JUN-FEI

High concentration nitrogen-containing germanium telluride based memory devices and processes of making