Inventor

HENDRIX BRYAN C

US85 patents

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HENDRIX BRYAN C

ADVANCED TECH MATERIALS

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

Composition and method for low temperature deposition of silicon-containing films

Stress control of thin films by mechanical deformation of wafer substrate

Chemical vapor deposition of high conductivity, adherent thin films of ruthenium

Composition and method for low temperature deposition of silicon-containing films

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same

Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices

Barrier structures for integration of high K oxides with Cu and Al electrodes

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices

Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same

Stress control of thin films by mechanical deformation of wafer substrate

Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices

Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrate

Low temperature CVD processes for preparing ferroelectric films using Bi amides

Amorphously deposited metal oxide ceramic films

MOCVD of SBT using toluene-based solvent system for precursor delivery

MOCVD of SBT using toluene based solvent system for precursor delivery

MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery

Low temperature deposition of phase change memory materials

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing

Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same

Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides

Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates

Textured Bi-based oxide ceramic films

Copper precursors for CVD/ALD/digital CVD of copper metal films

ENTEGRIS INC

Solid vaporizer

Source reagent-based delivery of fluid with high material flux for batch deposition

ALD processes for low leakage current and low equivalent oxide thickness BiTaO films

Chemical vapor deposition processes using ruthenium precursor and reducing gas

Vapor phase etching of hafnia and zirconia

Solid precursor-based delivery of fluid utilizing controlled solids morphology

Vapor deposition precursor compounds and process of use

Silylene compositions and methods of use thereof

Chemical vapor deposition processes using ruthenium precursor and reducing gas

Antimony and germanium complexes useful for CVD/ALD of metal thin films

HUNKS WILLIAM

Precursors for silicon dioxide gap fill

Antimony and germanium complexes useful for CVD/ALD of metal thin films

WANG ZIYUN

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Composition and method for low temperature deposition of silicon-containing films

CLEARY JOHN M

Solid precursor-based delivery of fluid utilizing controlled solids morphology

ADVANCED TEHNOLOGY MATERIALS I

Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

ROEDER JEFFREY F

Low temperature deposition of phase change memory materials