Inventor
NAKASE YASUNOBU
JP32 patents
⚠️ This page may combine multiple inventors who share the name “NAKASE YASUNOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
23 patentsUS5963502AOct 5, 1999
Clock-synchronous type semiconductor memory device capable of outputting read clock signal at correct timing
MITSUBISHI ELECTRIC CORP175 citations99
US5994934ANov 30, 1999
Delay locked loop circuit
MITSUBISHI ELECTRIC CORP142 citations98
US5298774AMar 29, 1994
Gate array system semiconductor integrated circuit device
MITSUBISHI ELECTRIC CORP125 citations98
US6392897B1May 21, 2002
Circuit module
MITSUBISHI ELECTRIC CORP66 citations96
US6101151AAug 8, 2000
Synchronous semiconductor memory device employing temporary data output stop scheme
MITSUBISHI ELECTRIC CORP68 citations96
US6188285B1Feb 13, 2001
Phase-locked loop circuit and voltage-controlled oscillator capable of producing oscillations in a plurality of frequency ranges
MITSUBISHI ELECTRIC CORP23 citations92
US6160434ADec 12, 2000
Ninety-degree phase shifter
MITSUBISHI ELECTRIC CORP23 citations92
US6128208AOct 3, 2000
Semiconductor device
MITSUBISHI ELECTRIC CORP19 citations92
US5621693AApr 15, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP33 citations92
US5574687ANov 12, 1996
Semiconductor memory
MITSUBISHI ELECTRIC CORP34 citations92
US5565796AOct 15, 1996
Bus drive circuit, receiver circuit, and bus system
MITSUBISHI ELECTRIC CORP35 citations92
US5365123ANov 15, 1994
Semiconductor logic circuits with diodes and amplitude limiter
MITSUBISHI ELECTRIC CORP25 citations92
US4792923ADec 20, 1988
Bipolar semiconductor memory device with double word lines structure
MITSUBISHI ELECTRIC CORP52 citations92
US6201758B1Mar 13, 2001
Semiconductor memory device permitting time required for writing data to be reduced
MITSUBISHI ELECTRIC CORP15 citations83
US5793222AAug 11, 1998
Input circuit
MITSUBISHI ELECTRIC CORP16 citations74
US5774410AJun 30, 1998
Semiconductor storage device
MITSUBISHI ELECTRIC CORP16 citations74
US5508966AApr 16, 1996
Sense amplifier circuit for semiconductor memory device
MITSUBISHI ELECTRIC CORP12 citations74
US5216630AJun 1, 1993
Static semiconductor memory device using bipolar transistor
MITSUBISHI ELECTRIC CORP20 citations74
US4821234AApr 11, 1989
Semiconductor memory device
MITSUBISHI ELECTRIC CORP9 citations74
US5982366ANov 9, 1999
Cursor memory
MITSUBISHI ELECTRIC CORP2 citations63
US5311078AMay 10, 1994
Logic circuit and semiconductor device
MITSUBISHI ELECTRIC CORP4 citations63
US6327166B1Dec 4, 2001
Semiconductor device
MITSUBISHI ELECTRIC CORP3 citations62
US5428302AJun 27, 1995
Logic circuit with controlled current supply output
MITSUBISHI ELECTRIC CORP1 citations52
RENESAS TECH CORP
8 patentsUS6760269B2Jul 6, 2004
Semiconductor memory device capable of generating internal data read timing precisely
RENESAS TECH CORP221 citations99
US6717842B2Apr 6, 2004
Static type semiconductor memory device with dummy memory cell
RENESAS TECH CORP26 citations93
US6690608B2Feb 10, 2004
Semiconductor memory device with internal data reading timing set precisely
RENESAS TECH CORP21 citations93
US6930941B2Aug 16, 2005
Semiconductor memory device having potential amplitude of global bit line pair restricted to partial swing
RENESAS TECH CORP37 citations92
US6765413B2Jul 20, 2004
Bus circuit preventing delay of the operational speed and design method thereof
RENESAS TECH CORP18 citations84
US6753697B2Jun 22, 2004
Semiconductor device capable of maintaining output signal even if internal power supply potential is turned off
RENESAS TECH CORP17 citations84
US6998668B2Feb 14, 2006
Semiconductor integrated circuit device including a level shifter
RENESAS TECH CORP7 citations74
US6771109B2Aug 3, 2004
Semiconductor device with interface circuitry having operating speed during low voltage mode improved
RENESAS TECH CORP3 citations63