Inventor
DAI XIAOWANG
CN19 patents
Patents
19 patentsUS11133325B2Sep 28, 2021
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations93
US10680003B2Jun 9, 2020
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD6 citations83
US10672711B2Jun 2, 2020
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD7 citations83
US10658378B2May 19, 2020
Through array contact (TAC) for three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD9 citations82
US11991880B2May 21, 2024
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD2 citations72
US11145666B2Oct 12, 2021
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10847528B2Nov 24, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10644015B2May 5, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations72
US10515975B1Dec 24, 2019
Method for forming dual-deck channel hole structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD6 citations72
US10937806B2Mar 2, 2021
Through array contact (TAC) for three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD2 citations71
US12142575B2Nov 12, 2024
Staircase etch control in forming three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12137558B2Nov 5, 2024
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12063780B2Aug 13, 2024
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12010838B2Jun 11, 2024
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11101276B2Aug 24, 2021
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US10522474B2Dec 31, 2019
Staircase etch control in forming three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations62
US10763099B2Sep 1, 2020
Wafer flatness control using backside compensation structure
YANGTZE MEMORY TECH CO LTD1 citations61
US12490440B2Dec 2, 2025
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations51
US10804287B2Oct 13, 2020
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations51