P

Inventor

MEHROTRA SAUMITRA RAJ

US21 patents
⚠️ This page may combine multiple inventors who share the name “MEHROTRA SAUMITRA RAJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NXP USA INC

18 patents
US10600911B2Mar 24, 2020

Field-effect transistor and method therefor

NXP USA INC7 citations82
US10522677B2Dec 31, 2019

Field-effect transistor and method therefor

NXP USA INC5 citations72
US10424646B2Sep 24, 2019

Field-effect transistor and method therefor

NXP USA INC6 citations72
US11777002B2Oct 3, 2023

Laterally-diffused metal-oxide semiconductor transistor and method therefor

NXP USA INC0 citations62
US11227921B2Jan 18, 2022

Laterally-diffused metal-oxide semiconductor transistor and method therefor

NXP USA INC1 citations62
US11217675B2Jan 4, 2022

Trench with different transverse cross-sectional widths

NXP USA INC0 citations62
US11961907B2Apr 16, 2024

Laterally-diffused metal-oxide semiconductor transistor and method therefor

NXP USA INC0 citations61
US11515416B2Nov 29, 2022

Laterally-diffused metal-oxide semiconductor transistor and method therefor

NXP USA INC1 citations61
US10833174B2Nov 10, 2020

Transistor devices with extended drain regions located in trench sidewalls

NXP USA INC1 citations57
US12057499B2Aug 6, 2024

Transistor devices with termination regions

NXP USA INC0 citations51
US11387348B2Jul 12, 2022

Transistor formed with spacer

NXP USA INC0 citations51
US11329156B2May 10, 2022

Transistor with extended drain region

NXP USA INC0 citations51
US11075110B1Jul 27, 2021

Transistor trench with field plate structure

NXP USA INC0 citations51
US10749028B2Aug 18, 2020

Transistor with gate/field plate structure

NXP USA INC0 citations41
US10749023B2Aug 18, 2020

Vertical transistor with extended drain region

NXP USA INC0 citations41
US10672903B2Jun 2, 2020

Semiconductor device with drain active area

NXP USA INC0 citations41
US10607880B2Mar 31, 2020

Die with buried doped isolation region

NXP USA INC0 citations41
US10600879B2Mar 24, 2020

Transistor trench structure with field plate structures

NXP USA INC0 citations41

NXP BV

3 patents