Inventor
LAI HUIXIAN
CN11 patents
Patents
11 patentsUS12494231B2Dec 9, 2025
Semiconductor device and method of fabricating the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations60
US12408331B2Sep 2, 2025
Memory device and manufacturing method thereof
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations60
US12156399B2Nov 26, 2024
Semiconductor memory device having plug and wire
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations60
US11765886B2Sep 19, 2023
Semiconductor memory device
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations60
US11688433B2Jun 27, 2023
Semiconductor device and method of fabricating the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations60
US11641736B2May 2, 2023
Memory device and manufacturing method thereof
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations60
US12237369B2Feb 25, 2025
Semiconductor device with shallow trench isolation having multi-stacked layers and method of forming the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations59
US11824087B2Nov 21, 2023
Shallow trench isolation structure and semiconductor device with the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations59
US11069774B2Jul 20, 2021
Shallow trench isolation structure and semiconductor device with the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations59
US12069851B2Aug 20, 2024
Transistor, memory and method of forming same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations57
US12068316B2Aug 20, 2024
Semiconductor device and method of forming the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations51