Inventor
TSAO SYLVIA S
US3 patents
Patents
3 patentsUS5023200AJun 11, 1991
Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
US ENERGY56 citations91
US4995954AFeb 26, 1991
Porous siliconformation and etching process for use in silicon micromachining
US ENERGY15 citations67
US5015346AMay 14, 1991
Electrochemical method for defect delineation in silicon-on-insulator wafers
US ENERGY3 citations59