Inventor

KAMIGAKI YOSHIAKI

JP41 patents

⚠️ This page may combine multiple inventors who share the name “KAMIGAKI YOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KAMIGAKI YOSHIAKI

HITACHI LTD

Semiconductor integrated circuit

Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs

Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells

Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements

Semiconductor integrated circuit device having single-element type non-volatile memory elements

Programmable semiconductor integrated circuitry including a programming semiconductor element

Semiconductor integrated circuit device having single-element type nonvolatile memory elements

Nonvolatile memory device

Non-volatile semiconductor memory device erasing operation

Semiconductor memory device

Insulated gate field effect transistor

Nonvolatile semiconductor memory device

Non-volatile semiconductor memory device

Semiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of data

Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements

Semiconductor integrated circuit device having single-element type non-volatile memory elements

Semiconductor integrated circuit

Non-volatile semiconductor memory device

Method of manufacturing a semiconductor integrated circuit device

Shift array for pattern information processing device utilizing charge coupled semiconductor device

Information signal transfer method and a charge transfer

RENESAS TECH CORP

Semiconductor device

Semiconductor device

Semiconductor integrated circuit

Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets

Semiconductor integrated circuit having two switch transistors formed between two diffusion-layer lines

Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements

Semiconductor integrated circuit having discrete trap type memory cells

Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)

Nonvolatile memory device with multi-bit memory cells having plural side gates

Method of manufacturing a semiconductor memory device having a memory cell portion including MISFETs with a floating gate and a peripheral circuit portion with MISFETs

Semiconductor integrated circuit device and method of manufacturing the same

RENESAS ELECTRONICS CORP

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

HITACHI ULSI SYS CO LTD

Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed

TANAKA TOSHIHIRO

Semiconductor device

HITACHI VLSI

Semiconductor integrated circuit device