Inventor
VARTANIAN VICTOR H
US10 patents
Patents
10 patentsUS7018901B1Mar 28, 2006
Method for forming a semiconductor device having a strained channel and a heterojunction source/drain
FREESCALE SEMICONDUCTOR INC105 citations97
US7067868B2Jun 27, 2006
Double gate device having a heterojunction source/drain and strained channel
FREESCALE SEMICONDUCTOR INC39 citations92
US7821067B2Oct 26, 2010
Electronic devices including a semiconductor layer
FREESCALE SEMICONDUCTOR INC11 citations81
US7265004B2Sep 4, 2007
Electronic devices including a semiconductor layer and a process for forming the same
FREESCALE SEMICONDUCTOR INC15 citations81
US7659156B2Feb 9, 2010
Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer
FREESCALE SEMICONDUCTOR INC5 citations72
US7700420B2Apr 20, 2010
Integrated circuit with different channel materials for P and N channel transistors and method therefor
FREESCALE SEMICONDUCTOR INC3 citations62
US7468313B2Dec 23, 2008
Engineering strain in thick strained-SOI substrates
FREESCALE SEMICONDUCTOR INC2 citations62
US7911002B2Mar 22, 2011
Semiconductor device with selectively modulated gate work function
FREESCALE SEMICONDUCTOR INC1 citations51
US7217667B2May 15, 2007
Processes for forming electronic devices including a semiconductor layer
FREESCALE SEMICONDUCTOR INC0 citations51
US7560318B2Jul 14, 2009
Process for forming an electronic device including semiconductor layers having different stresses
FREESCALE SEMICONDUCTOR INC0 citations41