Inventor
PABUSTAN JONATHAN
US20 patents
⚠️ This page may combine multiple inventors who share the name “PABUSTAN JONATHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
7 patentsUS8023334B2Sep 20, 2011
Program window adjust for memory cell signal line delay
MICRON TECHNOLOGY INC23 citations92
US7843725B2Nov 30, 2010
M+L bit read column architecture for M bit memory cells
MICRON TECHNOLOGY INC33 citations92
US8385121B2Feb 26, 2013
Memory adapted to program a number of bits to a memory cell and read a different number of bits from the memory cell
MICRON TECHNOLOGY INC6 citations84
US7864589B2Jan 4, 2011
Mitigation of runaway programming of a memory device
MICRON TECHNOLOGY INC12 citations84
US7835190B2Nov 16, 2010
Methods of erase verification for a flash memory device
MICRON TECHNOLOGY INC7 citations73
US9423969B2Aug 23, 2016
Sensing operations in a memory device
MICRON TECHNOLOGY INC1 citations63
US8737127B2May 27, 2014
Memory controllers to output data signals of a number of bits and to receive data signals of a different number of bits
MICRON TECHNOLOGY INC0 citations52
SARIN VISHAL
7 patentsUS8117375B2Feb 14, 2012
Memory device program window adjustment
SARIN VISHAL6 citations84
US8223551B2Jul 17, 2012
Soft landing for desired program threshold voltage
SARIN VISHAL5 citations74
US8307152B2Nov 6, 2012
Memory device program window adjustment
SARIN VISHAL1 citations63
US8169832B2May 1, 2012
Methods of erase verification for a flash memory device
SARIN VISHAL4 citations62
US8773912B2Jul 8, 2014
Soft landing for desired program threshold voltage
SARIN VISHAL0 citations52
US8713246B2Apr 29, 2014
Memory device program window adjustment
SARIN VISHAL0 citations52
US8274835B2Sep 25, 2012
Mitigation of runaway programming of a memory device
SARIN VISHAL0 citations52
SILICON STORAGE TECH INC
2 patentsUS7668013B2Feb 23, 2010
Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio
SILICON STORAGE TECH INC17 citations91
US7974136B2Jul 5, 2011
Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio
SILICON STORAGE TECH INC2 citations61