Inventor
MRINAL ARYADEEP
TW7 patents
Patents
7 patentsUS9799742B1Oct 24, 2017
Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the same
TAIWAN SEMICONDUCTOR CO LTD2 citations68
US9741825B1Aug 22, 2017
Method for manufacturing field effect transistor having widened trench
TAIWAN SEMICONDUCTOR CO LTD2 citations68
US12199153B2Jan 14, 2025
High voltage edge termination structure for power semiconductor devices
TAIWAN SEMICONDUCTOR CO LTD0 citations60
US12154955B2Nov 26, 2024
High voltage edge termination structure for power semiconductor devices and manufacturing method thereof
TAIWAN SEMICONDUCTOR CO LTD0 citations60
US12087831B2Sep 10, 2024
High voltage edge termination structure for power semiconductor devices and manufacturing method thereof
TAIWAN SEMICONDUCTOR CO LTD0 citations60
US9960244B2May 1, 2018
Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the same
TAIWAN SEMICONDUCTOR CO LTD0 citations47
US9905690B1Feb 27, 2018
Field effect transistor having a multi-width electrode structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR CO LTD1 citations47