Inventor
YOO KYU-TAE
KR23 patents
⚠️ This page may combine multiple inventors who share the name “YOO KYU-TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS7859029B2Dec 28, 2010
FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor
SAMSUNG ELECTRONICS CO LTD160 citations98
US8035175B2Oct 11, 2011
Field effect transistor for detecting ionic material and method of detecting ionic material using the same
SAMSUNG ELECTRONICS CO LTD90 citations97
US7579136B2Aug 25, 2009
Microfluidic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD32 citations92
US7151301B2Dec 19, 2006
Sensitivity enhanced biomolecule field effect transistor
SAMSUNG ELECTRONICS CO LTD23 citations92
US8038943B2Oct 18, 2011
Method of detecting bio-molecules using field effect transistor without fixing probe bio-molecules on the gate sensing surface
SAMSUNG ELECTRONICS CO LTD7 citations83
US7659149B2Feb 9, 2010
Method of electrically detecting biomolecule
SAMSUNG ELECTRONICS CO LTD11 citations83
US7824530B2Nov 2, 2010
Apparatus having reduced noise and method of using the apparatus for detecting ionic materials
SAMSUNG ELECTRONICS CO LTD6 citations72
US7839134B2Nov 23, 2010
Method and apparatus for simultaneously detecting size and concentration of ionic material
SAMSUNG ELECTRONICS CO LTD2 citations62
US7510865B2Mar 31, 2009
Sensing switch and detecting method using the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7928740B2Apr 19, 2011
Method for positioning carbon nanotubes between electrodes, biomolecule detector based on carbon nanotube-probe complexes and detection method using the same
SAMSUNG ELECTRONICS CO LTD4 citations59
US8357957B2Jan 22, 2013
FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor
SAMSUNG ELECTRONICS CO LTD0 citations51
US7981666B2Jul 19, 2011
Sensing switch and detecting method using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7943970B2May 17, 2011
Method of detecting bio-molecules using the same field effect transistor on the gate sensing surface
SAMSUNG ELECTRONICS CO LTD1 citations51
US7790440B2Sep 7, 2010
Sensing switch and detecting method using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7727622B2Jun 1, 2010
Apparatus for calibrating optical scanner, method of manufacturing the same, and method of calibrating optical scanner using the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US8366905B2Feb 5, 2013
Apparatus having reduced noise and method of using the apparatus for detecting ionic materials
SAMSUNG ELECTRONICS CO LTD0 citations50
US7985453B2Jul 26, 2011
Apparatus for calibrating optical scanner, method of manufacturing the same, and method of calibrating optical scanner using the same
SAMSUNG ELECTRONICS CO LTD1 citations48
SHIM JEO-YOUNG
2 patentsUS8735077B2May 27, 2014
FET-type biosensor with surface modification
SHIM JEO-YOUNG6 citations82
US8293591B2Oct 23, 2012
Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device
SHIM JEO-YOUNG2 citations61