P

Inventor

GRACIAS DAVID H

US30 patents
⚠️ This page may combine multiple inventors who share the name “GRACIAS DAVID H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

14 patents
US7018918B2Mar 28, 2006

Method of forming a selectively converted inter-layer dielectric using a porogen material

INTEL CORP76 citations97
US7005390B2Feb 28, 2006

Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials

INTEL CORP52 citations96
US6905958B2Jun 14, 2005

Protecting metal conductors with sacrificial organic monolayers

INTEL CORP52 citations96
US6858527B2Feb 22, 2005

Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers

INTEL CORP51 citations96
US7238604B2Jul 3, 2007

Forming thin hard mask over air gap or porous dielectric

INTEL CORP42 citations92
US6974762B2Dec 13, 2005

Adhesion of carbon doped oxides by silanization

INTEL CORP19 citations92
US6943121B2Sep 13, 2005

Selectively converted inter-layer dielectric

INTEL CORP43 citations92
US7179757B2Feb 20, 2007

Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials

INTEL CORP11 citations84
US7205663B2Apr 17, 2007

Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers

INTEL CORP4 citations74
US6620741B1Sep 16, 2003

Method for controlling etch bias of carbon doped oxide films

INTEL CORP12 citations74
US7208455B2Apr 24, 2007

Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers

INTEL CORP2 citations63
US7268075B2Sep 11, 2007

Method to reduce the copper line roughness for increased electrical conductivity of narrow interconnects (<100nm)

INTEL CORP4 citations62
US7239019B2Jul 3, 2007

Selectively converted inter-layer dielectric

INTEL CORP2 citations62
US7175680B2Feb 13, 2007

Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers

INTEL CORP0 citations52

GRACIAS DAVID H

6 patents

UNIV JOHNS HOPKINS

6 patents

HARVARD COLLEGE

2 patents

KALLOO ANTHONY N

1 patent

US ARMY RES LAB ATTN RDRL LOC I

1 patent