Inventor

FUKAZAWA ATSUKI

JP80 patents

⚠️ This page may combine multiple inventors who share the name “FUKAZAWA ATSUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUKAZAWA ATSUKI

ASM IP HOLDING BV

Method for forming spacers using silicon nitride film for spacer-defined multiple patterning

Si precursors for deposition of SiN at low temperatures

Formation of silicon-containing thin films

Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition

Method for forming film filled in trench without seam or void

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

Continuous process incorporating atomic layer etching

Method for forming dielectric film in trenches by PEALD using H-containing gas

Method of plasma-enhanced atomic layer etching

Method for forming multi-element thin film constituted by at least five elements by PEALD

Method for forming Si-containing film using two precursors by ALD

Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap

Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

Method for cleaning reaction chamber using pre-cleaning process

Method and apparatus for filling a gap

Method for forming insulation film using non-halide precursor having four or more silicons

Si precursors for deposition of SiN at low temperatures

Si precursors for deposition of SiN at low temperatures

Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition

Substrate processing apparatus and method of processing substrate

Si precursors for deposition of SiN at low temperatures

ASM JAPAN

Method for forming dielectric film using siloxane-silazane mixture

Method of forming conformal dielectric film having Si-N bonds by PECVD

Method of forming highly conformal amorphous carbon layer

Method for forming inorganic silazane-based dielectric film

Method for forming silazane-based dielectric film

Device isolation technology on semiconductor substrate

Method for depositing flowable material using alkoxysilane or aminosilane precursor

Method for forming insulation film

Method for forming insulation film

Method for forming low-k hard film

Insulation film on semiconductor substrate and method for forming same

Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength

Insulation film on semiconductor substrate and method for forming same

Method for forming polycrystal silicon film for semiconductor elements

ASM INT NV

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

FUKAZAWA ATSUKI

Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group

Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control

Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen

Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen

ASM INT

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

Methods for forming doped silicon oxide thin films

KOBAYASHI AKIKO

Method of forming insulation film using plasma treatment cycles

HSIEH JULIAN J

Method for forming interconnect structure having airgap