P

Inventor

MATSUKI NOBUO

JP41 patents
⚠️ This page may combine multiple inventors who share the name “MATSUKI NOBUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ASM JAPAN

35 patents
US8003174B2Aug 23, 2011

Method for forming dielectric film using siloxane-silazane mixture

ASM JAPAN521 citations99
US7781352B2Aug 24, 2010

Method for forming inorganic silazane-based dielectric film

ASM JAPAN480 citations99
US7651959B2Jan 26, 2010

Method for forming silazane-based dielectric film

ASM JAPAN589 citations99
US7622369B1Nov 24, 2009

Device isolation technology on semiconductor substrate

ASM JAPAN604 citations99
US6455445B2Sep 24, 2002

Silicone polymer insulation film on semiconductor substrate and method for forming the film

ASM JAPAN645 citations99
US6410463B1Jun 25, 2002

Method for forming film with low dielectric constant on semiconductor substrate

ASM JAPAN615 citations99
US7354873B2Apr 8, 2008

Method for forming insulation film

ASM JAPAN479 citations98
US6432846B1Aug 13, 2002

Silicone polymer insulation film on semiconductor substrate and method for forming the film

ASM JAPAN125 citations98
US6383955B1May 7, 2002

Silicone polymer insulation film on semiconductor substrate and method for forming the film

ASM JAPAN857 citations98
US6352945B1Mar 5, 2002

Silicone polymer insulation film on semiconductor substrate and method for forming the film

ASM JAPAN718 citations98
US7504344B2Mar 17, 2009

Method of forming a carbon polymer film using plasma CVD

ASM JAPAN419 citations97
US7064088B2Jun 20, 2006

Method for forming low-k hard film

ASM JAPAN62 citations96
US6631692B1Oct 14, 2003

Plasma CVD film-forming device

ASM JAPAN73 citations96
US6559520B2May 6, 2003

Siloxan polymer film on semiconductor substrate

ASM JAPAN87 citations96
US6514880B2Feb 4, 2003

Siloxan polymer film on semiconductor substrate and method for forming same

ASM JAPAN63 citations95
US6602800B2Aug 5, 2003

Apparatus for forming thin film on semiconductor substrate by plasma reaction

ASM JAPAN16 citations93
US6881683B2Apr 19, 2005

Insulation film on semiconductor substrate and method for forming same

ASM JAPAN51 citations92
US6830007B2Dec 14, 2004

Apparatus and method for forming low dielectric constant film

ASM JAPAN26 citations92
US6784123B2Aug 31, 2004

Insulation film on semiconductor substrate and method for forming same

ASM JAPAN28 citations92
US6740367B2May 25, 2004

Plasma CVD film-forming device

ASM JAPAN34 citations92
US6537928B1Mar 25, 2003

Apparatus and method for forming low dielectric constant film

ASM JAPAN33 citations92
US6149976ANov 21, 2000

Method of manufacturing fluorine-containing silicon oxide films for semiconductor device

ASM JAPAN20 citations86
US6852650B2Feb 8, 2005

Insulation film on semiconductor substrate and method for forming same

ASM JAPAN19 citations84
US6653719B2Nov 25, 2003

Silicone polymer insulation film on semiconductor substrate

ASM JAPAN7 citations74
US7718553B2May 18, 2010

Method for forming insulation film having high density

ASM JAPAN2 citations63
US7655577B2Feb 2, 2010

Method of forming silicon-containing insulation film having low dielectric constant and low film stress

ASM JAPAN2 citations63
US7147900B2Dec 12, 2006

Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation

ASM JAPAN6 citations63
US7148154B2Dec 12, 2006

Method of forming silicon-containing insulation film having low dielectric constant and low film stress

ASM JAPAN3 citations63
US7012268B2Mar 14, 2006

Gas-shield electron-beam gun for thin-film curing application

ASM JAPAN2 citations63
US6759344B2Jul 6, 2004

Method for forming low dielectric constant interlayer insulation film

ASM JAPAN4 citations63
US6737366B2May 18, 2004

Method of forming low dielectric constant insulation film for semiconductor device

ASM JAPAN2 citations63
US7410915B2Aug 12, 2008

Method of forming carbon polymer film using plasma CVD

ASM JAPAN6 citations62
US7470633B2Dec 30, 2008

Method of forming a carbon polymer film using plasma CVD

ASM JAPAN3 citations61
US7638441B2Dec 29, 2009

Method of forming a carbon polymer film using plasma CVD

ASM JAPAN1 citations52
US7560144B2Jul 14, 2009

Method of stabilizing film quality of low-dielectric constant film

ASM JAPAN1 citations45

SEKISUI CHEMICAL CO LTD

2 patents

TOKYO ELECTRON LTD

2 patents

CANON ANELVA CORP

1 patent

FUKAZAWA ATSUKI

1 patent