Inventor

RHEE HWA-SUNG

KR71 patents

⚠️ This page may combine multiple inventors who share the name “RHEE HWA-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RHEE HWA-SUNG

SAMSUNG ELECTRONICS CO LTD

Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same

CMOS integrated circuit devices and substrates having unstrained silicon active layers

Methods of fabricating a semiconductor device using a selective epitaxial growth technique

Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby

At least penta-sided-channel type of FinFET transistor

SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereon

Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same

Method for fabricating semiconductor device including gate spacer

Flash memory having local SONOS structure using notched gate and manufacturing method thereof

Semiconductor device having gate all around type transistor and method of forming the same

MOS transistor having a T-shaped gate electrode and method for fabricating the same

Semiconductor device having gate all around type transistor and method of forming the same

Method of manufacturing CMOS semiconductor device

Semiconductor devices having faceted channels and methods of fabricating such devices

Method of fabricating CMOS transistor and CMOS transistor fabricated thereby

MOS transistor having a T-shaped gate electrode

Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein

Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same

Method for forming SOI substrate

CMOS gate electrode using selective growth and a fabrication method thereof

Semiconductor transistor using L-shaped spacer and method of fabricating the same

SOI-type semiconductor device and method of forming the same

Semiconductor device having hetero grain stack gate

Semiconductor devices and methods of manufacturing the same

Method of forming an at least penta-sided-channel type of FinFET transistor

Method of fabricating MOS transistor having epitaxial region

Transistor and method of manufacturing the same

Dual gate stack CMOS structure with different dielectrics

Semiconductor device

Field effect transistor having germanium nanorod and method of manufacturing the same

Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same

Semiconductor transistor using L-shaped spacer

CMOS semiconductor device and method of manufacturing the same

Integrated circuit devices and methods of manufacturing the same

Semiconductor device having jumper pattern and blocking pattern

Semiconductor device having hetero grain stack gate and method of forming the same

Semiconductor device

Method of manufacturing a semiconductor device

Semiconductor device including field effect transistor and method of forming the same

Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device

Semiconductor device

CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the same

Method of fabricating CMOS transistor and CMOS transistor fabricated thereby

Method of forming MOS transistor having fully silicided metal gate electrode

Transistors for semiconductor device and methods of fabricating the same

KIM MYUNG-SUN

Semiconductor integrated circuit devices having different thickness silicon-germanium layers

CHUNG JAE-YUP

Integrated circuit devices and methods of manufacturing the same

CHUNG JAE YUP

Integrated circuit device and method of manufacturing the same