Inventor
TETSUJI UENO
KR5 patents
Patents
5 patentsUS7385247B2Jun 10, 2008
At least penta-sided-channel type of FinFET transistor
SAMSUNG ELECTRONICS CO LTD46 citations96
US7671420B2Mar 2, 2010
Semiconductor devices having faceted channels and methods of fabricating such devices
SAMSUNG ELECTRONICS CO LTD28 citations92
US7354835B2Apr 8, 2008
Method of fabricating CMOS transistor and CMOS transistor fabricated thereby
SAMSUNG ELECTRONICS CO LTD26 citations92
US7723193B2May 25, 2010
Method of forming an at least penta-sided-channel type of FinFET transistor
SAMSUNG ELECTRONICS CO LTD13 citations84
US7307274B2Dec 11, 2007
Transistors having reinforcement layer patterns and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52