Inventor
YOO JAE-YOON
KR19 patents
⚠️ This page may combine multiple inventors who share the name “YOO JAE-YOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS7385247B2Jun 10, 2008
At least penta-sided-channel type of FinFET transistor
SAMSUNG ELECTRONICS CO LTD46 citations96
US6835621B2Dec 28, 2004
Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon
SAMSUNG ELECTRONICS CO LTD69 citations96
US6383877B1May 7, 2002
Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer
SAMSUNG ELECTRONICS CO LTD49 citations96
US7033895B2Apr 25, 2006
Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process
SAMSUNG ELECTRONICS CO LTD22 citations92
US6624496B2Sep 23, 2003
Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer
SAMSUNG ELECTRONICS CO LTD29 citations92
US6486039B2Nov 26, 2002
Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknesses
SAMSUNG ELECTRONICS CO LTD53 citations92
US7723193B2May 25, 2010
Method of forming an at least penta-sided-channel type of FinFET transistor
SAMSUNG ELECTRONICS CO LTD13 citations84
US6878575B2Apr 12, 2005
Method of forming gate oxide layer in semiconductor devices
SAMSUNG ELECTRONICS CO LTD11 citations72
US7439596B2Oct 21, 2008
Transistors for semiconductor device and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7101776B2Sep 5, 2006
Method of fabricating MOS transistor using total gate silicidation process
SAMSUNG ELECTRONICS CO LTD4 citations63
US6987310B2Jan 17, 2006
Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations63
US7618868B2Nov 17, 2009
Method of manufacturing field effect transistors using sacrificial blocking layers
SAMSUNG ELECTRONICS CO LTD3 citations62
US7368792B2May 6, 2008
MOS transistor with elevated source/drain structure
SAMSUNG ELECTRONICS CO LTD0 citations52
US7084041B2Aug 1, 2006
Bipolar device and method of manufacturing the same including pre-treatment using germane gas
SAMSUNG ELECTRONICS CO LTD1 citations51
SK HYNIX INC
5 patentsUS11159722B2Oct 26, 2021
Method for processing image signal, image signal processor, and image sensor chip
SK HYNIX INC4 citations70
US11451752B2Sep 20, 2022
Grid gain calculation circuit, image sensing device and operation method of the same
SK HYNIX INC0 citations62
US12401917B2Aug 26, 2025
Image processing device and image correcting method
SK HYNIX INC0 citations61
US12008789B2Jun 11, 2024
Image sensing device and method of operating the same
SK HYNIX INC0 citations60
US11736812B2Aug 22, 2023
Image sensing device for correcting image using block areas and method of operating the same
SK HYNIX INC0 citations50