Inventor
LEE HO
KR83 patents
⚠️ This page may combine multiple inventors who share the name “LEE HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
24 patentsUS7952147B2May 31, 2011
Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same
SAMSUNG ELECTRONICS CO LTD122 citations99
US7361563B2Apr 22, 2008
Methods of fabricating a semiconductor device using a selective epitaxial growth technique
SAMSUNG ELECTRONICS CO LTD94 citations98
US7385247B2Jun 10, 2008
At least penta-sided-channel type of FinFET transistor
SAMSUNG ELECTRONICS CO LTD46 citations96
US7671420B2Mar 2, 2010
Semiconductor devices having faceted channels and methods of fabricating such devices
SAMSUNG ELECTRONICS CO LTD28 citations92
US7354835B2Apr 8, 2008
Method of fabricating CMOS transistor and CMOS transistor fabricated thereby
SAMSUNG ELECTRONICS CO LTD26 citations92
US7033895B2Apr 25, 2006
Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process
SAMSUNG ELECTRONICS CO LTD22 citations92
US7723193B2May 25, 2010
Method of forming an at least penta-sided-channel type of FinFET transistor
SAMSUNG ELECTRONICS CO LTD13 citations84
US7611951B2Nov 3, 2009
Method of fabricating MOS transistor having epitaxial region
SAMSUNG ELECTRONICS CO LTD9 citations84
US7601983B2Oct 13, 2009
Transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7217326B2May 15, 2007
Chemical vapor deposition apparatus
SAMSUNG ELECTRONICS CO LTD13 citations84
US10854612B2Dec 1, 2020
Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US9318573B2Apr 19, 2016
Field effect transistor having germanium nanorod and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations82
US7611973B2Nov 3, 2009
Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7879668B2Feb 1, 2011
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7791146B2Sep 7, 2010
Semiconductor device including field effect transistor and method of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7776723B2Aug 17, 2010
Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7728393B2Jun 1, 2010
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7714394B2May 11, 2010
CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7619285B2Nov 17, 2009
Method of fabricating CMOS transistor and CMOS transistor fabricated thereby
SAMSUNG ELECTRONICS CO LTD4 citations63
US7582535B2Sep 1, 2009
Method of forming MOS transistor having fully silicided metal gate electrode
SAMSUNG ELECTRONICS CO LTD3 citations63
US7439596B2Oct 21, 2008
Transistors for semiconductor device and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7101776B2Sep 5, 2006
Method of fabricating MOS transistor using total gate silicidation process
SAMSUNG ELECTRONICS CO LTD4 citations63
US6987310B2Jan 17, 2006
Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations63
US11862476B2Jan 2, 2024
Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material
SAMSUNG ELECTRONICS CO LTD0 citations62
KOREA ADVANCED INST SCI & TECH
5 patentsUS6376027B1Apr 23, 2002
Method for crystallizing lithium transition metal oxide thin film by plasma treatment
KOREA ADVANCED INST SCI & TECH121 citations97
US6372383B1Apr 16, 2002
Method for preparing electrodes for Ni/Metal hydride secondary cells using Cu
KOREA ADVANCED INST SCI & TECH29 citations92
US6491867B1Dec 10, 2002
High capacity and high performance Zr-based hydrogen storage alloy for secondary cells
KOREA ADVANCED INST SCI & TECH6 citations73
US6106768AAug 22, 2000
Mm-Ni type hydrogen storage alloy for Ni/MH secondary cell
KOREA ADVANCED INST SCI & TECH13 citations72
US6332908B1Dec 25, 2001
Method for modifying surface of hydrogen storage alloy for NI/MH secondary battery using flake type metal
KOREA ADVANCED INST SCI & TECH9 citations70
SAMSUNG DISPLAY CO LTD
4 patentsUS11727835B2Aug 15, 2023
Pixel circuit, display apparatus including the same and method of driving the same
SAMSUNG DISPLAY CO LTD4 citations74
US10902817B2Jan 26, 2021
Sink device with variable frame rate and liquid crystal display device including the same
SAMSUNG DISPLAY CO LTD4 citations73
US11763771B2Sep 19, 2023
Sink device with variable frame rate and display device including the same
SAMSUNG DISPLAY CO LTD0 citations62
US11054699B2Jul 6, 2021
Display apparatus and method of manufacturing the same
SAMSUNG DISPLAY CO LTD0 citations62
HUGHES ELECTRONICS CORP
2 patentsHUGHES AIRCRAFT CO
2 patentsKIM MYUNG-SUN
2 patentsUS8426916B2Apr 23, 2013
Semiconductor integrated circuit devices having different thickness silicon-germanium layers
KIM MYUNG-SUN7 citations83
US8207033B2Jun 26, 2012
Methods of fabricating different thickness silicon-germanium layers on semiconductor integrated circuit devices and semiconductor integrated circuit devices fabricated thereby
KIM MYUNG-SUN5 citations62
HALLA VISTEON CLIMATE CONTROL
2 patentsPACIFIC CORP
2 patentsVOLCANO CORP
1 patentSAMSUNG ELECTRO MECH
1 patentSNOLOC CORP
1 patentJUNG JAE-WOONG
1 patentLIN CHARLES P
1 patentLEE JONGHO
1 patentUIF UNIV INDUSTRY FOUNDATION YONSEI UNIV
1 patentShowing the top 50 of 83 patents by PatentIndex Score.