Inventor

PARK MOON-HAN

KR34 patents

⚠️ This page may combine multiple inventors who share the name “PARK MOON-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK MOON-HAN

SAMSUNG ELECTRONICS CO LTD

Method of forming an insulating layer in a trench isolation type semiconductor device

At least penta-sided-channel type of FinFET transistor

Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon

Trench isolation structure, semiconductor device having the same, and trench isolation method

Trench isolation methods utilizing composite oxide films

Trench isolation regions having recess-inhibiting layers therein that protect against overetching

Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetching

Methods of forming trench-based isolation regions with reduced susceptibility to edge defects

Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process

Method of forming shallow trench isolation layer in semiconductor device

Trench isolation regions having trench liners with recessed ends

Method for forming a trench isolation in a semiconductor device

Annealing methods for forming isolation trenches

Isolation method of semiconductor device

Method of forming an at least penta-sided-channel type of FinFET transistor

Methods of fabricating profiled device isolation trenches in integrated circuits

Method for efficiently removing by-products produced in dry-etching

Trench isolation method

Integrated circuit device isolation methods using high selectivity chemical-mechanical polishing

Method of forming gate oxide layer in semiconductor devices

FinFET devices having active patterns and gate spacers on field insulating layers

Method of manufacturing integrated circuit device

Transistors for semiconductor device and methods of fabricating the same

Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor device

Method for forming trench type isolation film using annealing

Capacitor for a semiconductor device and method of fabricating same

MOS transistor with elevated source/drain structure

Method of manufacturing integrated circuit device

Methods for fabricating finFET devices having gate spacers on field insulating layers

Semiconductor device having insulating pattern and method of forming the same

LIM HA-JIN

Methods of forming gate structure and methods of manufacturing semiconductor device including the same

Method of patterning a semiconductor device with hard mask

DO JIN-HO

Methods of forming MOSFET devices using nitrogen-injected oxide layers to form gate insulating layers having different thicknesses

SONG MOON-KYUN

Methods of manufacturing semiconductor devices