Inventor
VOEGELI BENJAMIN T
US17 patents
⚠️ This page may combine multiple inventors who share the name “VOEGELI BENJAMIN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
9 patentsUS7829945B2Nov 9, 2010
Lateral diffusion field effect transistor with asymmetric gate dielectric profile
IBM31 citations92
US7956412B2Jun 7, 2011
Lateral diffusion field effect transistor with a trench field plate
IBM14 citations84
US7868809B2Jan 11, 2011
Digital to analog converter having fastpaths
IBM8 citations84
US7710302B2May 4, 2010
Design structures and systems involving digital to analog converters
IBM14 citations84
US7972919B2Jul 5, 2011
Vertical PNP transistor and method of making same
IBM9 citations83
US7892910B2Feb 22, 2011
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
IBM7 citations83
US7732835B2Jun 8, 2010
Vertical P-N junction device and method of forming same
IBM7 citations73
US7459367B2Dec 2, 2008
Method of forming a vertical P-N junction device
IBM6 citations73
US7886240B2Feb 8, 2011
Modifying layout of IC based on function of interconnect and related circuit and design structure
IBM3 citations63
FEILCHENFELD NATALIE B
4 patentsUS8236662B2Aug 7, 2012
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
FEILCHENFELD NATALIE B3 citations60
US8946013B2Feb 3, 2015
Lateral diffusion field effect transistor with drain region self-aligned to gate electrode
FEILCHENFELD NATALIE B0 citations51
US8114750B2Feb 14, 2012
Lateral diffusion field effect transistor with drain region self-aligned to gate electrode
FEILCHENFELD NATALIE B1 citations51
US8525293B2Sep 3, 2013
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
FEILCHENFELD NATALIE B0 citations50