Inventor

LIN TSANN

US129 patents

⚠️ This page may combine multiple inventors who share the name “LIN TSANN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN TSANN

IBM

Magnetic tunnel junction magnetoresistive sensor with in-stack biasing

Method of forming a barrier layer of a tunneling magnetoresistive sensor

Spin valve sensor with encapsulated keeper layer and method of making

Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap

Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor

Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process

Trilayer seed layer structure for spin valve sensor

Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency

Spin valves with enhanced GMR and thermal stability

Spin valves with high uniaxial anisotropy reference and keeper layers

Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads

Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads

Magnetic head with magnetically stable shield layers and/or write poles

Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element

Magnetically stable shields for MR head

Magnetoresistive sensor having exchange-coupled stabilization for transverse bias layer

Method of manufacturing a magnetoresistive sensor

Magnetoresistive sensor having antiferromagnetic exchange bias

Magnetoresistive sensor having antiferromagnetic layer for exchange bias

Spin-valve sensor with pinning layers comprising multiple antiferromagnetic films

Dual magnetic tunnel junction sensor with a longitudinal bias stack

Spin valve sensor with insulating and conductive seed layers

Trilayer seed layer structure for spin valve sensor

Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer

Current-perpendicular-to-plane read head with an amorphous magnetic bottom shield layer and an amorphous nonmagnetic bottom lead layer

Fabrication method for spin valve sensor with insulating and conducting seed layers

Spin valve sensor with nonmagnetic oxide seed layer

Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers

Spin valve magnetoresistive head with two sets of ferromagnetic/antiferromagnetic films having high blocking temperatures and fabrication method

Fabrication process of Ni-Mn spin valve sensor

Fabrication process of Ni-Mn spin valve sensor

Spin valve sensor with improved magnetic stability of the pinned layer

Fully-pinned, flux-closed spin valve

HITACHI GLOBAL STORAGE TECH

Method for forming an MgO barrier layer in a tunneling magnetoresistive (TMR) device

In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture

Dual spin valve sensor with a longitudinal bias stack

Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process

In-situ oxidized films for use as gap layers for a spin-valve sensor and methods of manufacture

Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabrication

Method of providing a low-stress sensor configuration for a lithography-defined read sensor

Tunneling magnetoresistive (TMR) sensor with a Co-Fe-B free layer having a negative saturation magnetostriction

Current-perpendicular-to-plane sensor epitaxially grown on a bottom shield

In-line contiguous resistive lapping guide for magnetic sensors

LIN TSANN

Current-perpendicular-to-plane (CPP) read sensor with dual seed and cap layers

Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer, shielding and seed layers

Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers

Current-perpendicular-to-plane (CPP) read sensor with multiple reference layers

TAIWAN SEMICONDUCTOR MFG CO LTD

Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication process

Magnetic device and magnetic random access memory

AVALANCHE TECHNOLOGY INC

Bottom-type perpendicular magnetic tunnel junction (pMTJ) element with thermally stable amorphous blocking layers