P

Inventor

MAURI DANIELE

US115 patents
⚠️ This page may combine multiple inventors who share the name “MAURI DANIELE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

28 patents
US5856897AJan 5, 1999

Self-biased dual spin valve sensor

IBM170 citations99
US5768069AJun 16, 1998

Self-biased dual spin valve sensor

IBM126 citations99
US6841395B2Jan 11, 2005

Method of forming a barrier layer of a tunneling magnetoresistive sensor

IBM89 citations98
US6262869B1Jul 17, 2001

Spin valve sensor with encapsulated keeper layer and method of making

IBM97 citations98
US6185078B1Feb 6, 2001

Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap

IBM94 citations98
US5583725ADec 10, 1996

Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor

IBM297 citations98
US5206590AApr 27, 1993

Magnetoresistive sensor based on the spin valve effect

IBM477 citations98
US7239489B2Jul 3, 2007

Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process

IBM56 citations96
US6411476B1Jun 25, 2002

Trilayer seed layer structure for spin valve sensor

IBM74 citations96
US6223420B1May 1, 2001

Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency

IBM49 citations96
US6141191AOct 31, 2000

Spin valves with enhanced GMR and thermal stability

IBM53 citations96
US6127053AOct 3, 2000

Spin valves with high uniaxial anisotropy reference and keeper layers

IBM74 citations96
US5999379ADec 7, 1999

Spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers and method of making

IBM43 citations96
US5731936AMar 24, 1998

Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability

IBM80 citations96
US5436778AJul 25, 1995

Magnetoresistive sensor having antiferromagnetic exchange bias

IBM44 citations96
US5315468AMay 24, 1994

Magnetoresistive sensor having antiferromagnetic layer for exchange bias

IBM78 citations96
US6896975B2May 24, 2005

Spin-valve sensor with pinning layers comprising multiple antiferromagnetic films

IBM31 citations93
US6822838B2Nov 23, 2004

Dual magnetic tunnel junction sensor with a longitudinal bias stack

IBM35 citations93
US6788499B2Sep 7, 2004

Spin valve sensor with insulating and conductive seed layers

IBM24 citations93
US6775111B2Aug 10, 2004

Trilayer seed layer structure for spin valve sensor

IBM20 citations93
US6747852B2Jun 8, 2004

Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer

IBM38 citations93
US6735058B2May 11, 2004

Current-perpendicular-to-plane read head with an amorphous magnetic bottom shield layer and an amorphous nonmagnetic bottom lead layer

IBM31 citations93
US6592725B2Jul 15, 2003

Fabrication method for spin valve sensor with insulating and conducting seed layers

IBM22 citations93
US6525913B1Feb 25, 2003

Read head with sunken prefill insulation for preventing lead to shield shorts and maintaining planarization

IBM23 citations93
US6175477B1Jan 16, 2001

Spin valve sensor with nonmagnetic oxide seed layer

IBM23 citations93
US6117569ASep 12, 2000

Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers

IBM41 citations93
US6175475B1Jan 16, 2001

Fully-pinned, flux-closed spin valve

IBM29 citations92
US5614727AMar 25, 1997

Thin film diode having large current capability with low turn-on voltages for integrated devices

IBM46 citations92

HITACHI GLOBAL STORAGE TECH

7 patents

WESTERN DIGITAL TECH INC

6 patents

WESTERN DIGITAL (FREMONT) LLC

3 patents

MAURI DANIELE

1 patent

KAISER CHRISTIAN

1 patent

HO KUOK SAN

1 patent

SHANG CHANGHE

1 patent

CHEN LAURENCE L

1 patent

WESTERN DIGITAL FREMONT LLC

1 patent

Showing the top 50 of 115 patents by PatentIndex Score.