Inventor
HA BYEOUNG-JU
KR34 patents
⚠️ This page may combine multiple inventors who share the name “HA BYEOUNG-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS6391673B1May 21, 2002
Method of fabricating micro electro mechanical system structure which can be vacuum-packed at wafer level
SAMSUNG ELECTRONICS CO LTD142 citations98
US7233218B2Jun 19, 2007
Air-gap type FBAR, and duplexer using the FBAR
SAMSUNG ELECTRONICS CO LTD47 citations96
US7053730B2May 30, 2006
Fabricating methods for air-gap type FBARs and duplexers including securing a resonating part substrate to a cavity forming substrate
SAMSUNG ELECTRONICS CO LTD43 citations96
US7622846B2Nov 24, 2009
Bulk acoustic wave resonator, filter and duplexer and methods of making same
SAMSUNG ELECTRONICS CO LTD24 citations93
US7423501B2Sep 9, 2008
Film bulk acoustic wave resonator and manufacturing method thererof
SAMSUNG ELECTRONICS CO LTD22 citations92
US7224245B2May 29, 2007
Duplexer fabricated with monolithic FBAR and isolation part and a method thereof
SAMSUNG ELECTRONICS CO LTD23 citations92
US7044201B2May 16, 2006
Flat heat transferring device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US6698503B2Mar 2, 2004
Heat transferring device having adiabatic unit
SAMSUNG ELECTRONICS CO LTD27 citations92
US6467348B1Oct 22, 2002
Microgyroscope with two resonant plates
SAMSUNG ELECTRONICS CO LTD24 citations92
US6609560B2Aug 26, 2003
Flat evaporator
SAMSUNG ELECTRONICS CO LTD47 citations91
US7893792B2Feb 22, 2011
Duplexer using an embedded PCB and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7498900B2Mar 3, 2009
System on chip structure comprising air cavity for isolating elements, duplexer, and duplexer fabrication method thereof
SAMSUNG ELECTRONICS CO LTD10 citations84
US7456041B2Nov 25, 2008
Manufacturing method of a MEMS structure, a cantilever-type MEMS structure, and a sealed fluidic channel
SAMSUNG ELECTRONICS CO LTD12 citations84
US7250831B2Jul 31, 2007
Filter comprising inductor, duplexer using the filter and fabricating methods thereof
SAMSUNG ELECTRONICS CO LTD13 citations84
US7793395B2Sep 14, 2010
Method for manufacturing a film bulk acoustic resonator
SAMSUNG ELECTRONICS CO LTD5 citations74
US7253703B2Aug 7, 2007
Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US7253705B2Aug 7, 2007
Air-gap type thin-film bulk acoustic resonator and fabrication method therefor
SAMSUNG ELECTRONICS CO LTD8 citations74
US7205702B2Apr 17, 2007
Film bulk acoustic resonator and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US7095298B2Aug 22, 2006
Film bulk acoustic resonator having supports and manufacturing method therefore
SAMSUNG ELECTRONICS CO LTD8 citations74
US6880625B2Apr 19, 2005
Capillary pumped loop system
SAMSUNG ELECTRONICS CO LTD10 citations73
US7619492B2Nov 17, 2009
Film bulk acoustic resonator and a method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7615842B2Nov 10, 2009
Inductor integrated chip
SAMSUNG ELECTRONICS CO LTD6 citations63
US7663450B2Feb 16, 2010
Monolithic duplexer
SAMSUNG ELECTRONICS CO LTD3 citations62
US7168479B2Jan 30, 2007
Heat transfer apparatus
SAMSUNG ELECTRONICS CO LTD3 citations62
US7548139B2Jun 16, 2009
Coupled resonator filter and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD5 citations60
US9054673B2Jun 9, 2015
Resonator and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US7535322B2May 19, 2009
Monolithic RF filter
SAMSUNG ELECTRONICS CO LTD1 citations52
US6494058B2Dec 17, 2002
Plate type condenser
SAMSUNG ELECTRONICS CO LTD0 citations41
PARK YUN-KWON
3 patentsUS8720023B2May 13, 2014
Method of manufacturing a monolithic duplexer
PARK YUN-KWON0 citations50
US8659098B2Feb 25, 2014
Resonator and fabrication method thereof
PARK YUN-KWON0 citations50
US8120015B2Feb 21, 2012
Resonant structure comprising wire and resonant tunneling transistor
PARK YUN-KWON0 citations50