Inventor
RAHMAN ARDASHEIR
US22 patents
⚠️ This page may combine multiple inventors who share the name “RAHMAN ARDASHEIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
21 patentsUS10217674B1Feb 26, 2019
Three-dimensional monolithic vertical field effect transistor logic gates
IBM16 citations92
US11251182B2Feb 15, 2022
Staggered stacked vertical crystalline semiconducting channels
IBM2 citations73
US11094803B1Aug 17, 2021
Nanosheet device with tall suspension and tight contacted gate poly-pitch
IBM3 citations73
US10325821B1Jun 18, 2019
Three-dimensional stacked vertical transport field effect transistor logic gate with buried power bus
IBM6 citations71
US12396212B2Aug 19, 2025
Gate all-around device with through-stack nanosheet 2D channel
IBM0 citations62
US12356685B2Jul 8, 2025
Looped long channel field-effect transistor
IBM0 citations62
US12310102B2May 20, 2025
Stacked vertical transport field-effect transistor logic gate structures with shared epitaxial layers
IBM0 citations62
US11956939B2Apr 9, 2024
Static random access memory using vertical transport field effect transistors
IBM0 citations62
US11810918B2Nov 7, 2023
Stacked vertical transport field-effect transistor logic gate structures with shared epitaxial layers
IBM0 citations62
US11757012B2Sep 12, 2023
Source and drain contact cut last process to enable wrap-around-contact
IBM0 citations62
US11756961B2Sep 12, 2023
Staggered stacked vertical crystalline semiconducting channels
IBM0 citations62
US11678475B2Jun 13, 2023
Static random access memory using vertical transport field effect transistors
IBM0 citations62
US11205723B2Dec 21, 2021
Selective source/drain recess for improved performance, isolation, and scaling
IBM1 citations62
US11094781B2Aug 17, 2021
Nanosheet structures having vertically oriented and horizontally stacked nanosheets
IBM0 citations62
US10840345B2Nov 17, 2020
Source and drain contact cut last process to enable wrap-around-contact
IBM1 citations62
US10978573B2Apr 13, 2021
Spacer-confined epitaxial growth
IBM1 citations61
US12568806B2Mar 3, 2026
Conformal dielectric cap for subtractive vias
IBM0 citations52
US11742426B2Aug 29, 2023
Forming crossbar and non-crossbar transistors on the same substrate
IBM0 citations52
US11217680B2Jan 4, 2022
Vertical field-effect transistor with T-shaped gate
IBM0 citations52
US11177132B2Nov 16, 2021
Self aligned block masks for implantation control
IBM0 citations50
US12328935B2Jun 10, 2025
Integrated input output and logic device for nanosheet technology
IBM0 citations49