P

Inventor

NAMEKAWA TOSHIMASA

JP53 patents
⚠️ This page may combine multiple inventors who share the name “NAMEKAWA TOSHIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

45 patents
US6601199B1Jul 29, 2003

Memory-embedded LSI

TOSHIBA KK145 citations99
US7046569B2May 16, 2006

Semiconductor integrated circuit device including OTP memory, and method of programming OTP memory

TOSHIBA KK56 citations96
US7928796B2Apr 19, 2011

Constant voltage boost power supply

TOSHIBA KK45 citations94
US7256641B2Aug 14, 2007

Semiconductor device including a three or more stage semiconductor charge pump

TOSHIBA KK20 citations93
US6721213B2Apr 13, 2004

Electronic circuit and semiconductor storage device

TOSHIBA KK19 citations93
US6529399B1Mar 4, 2003

Semiconductor device realized by using partial SOI technology

TOSHIBA KK15 citations93
US6259636B1Jul 10, 2001

Semiconductor memory device having redundancy circuit for relieving faulty memory cells

TOSHIBA KK39 citations93
US6205079B1Mar 20, 2001

Semiconductor integrated circuit having power-supply circuits for producing internal supply voltages

TOSHIBA KK31 citations93
US6115301ASep 5, 2000

Semiconductor memory device having defect relieving system using data line shift method

TOSHIBA KK44 citations93
US8928302B2Jan 6, 2015

Step-up/down type power supply circuit

TOSHIBA KK7 citations84
US7656738B2Feb 2, 2010

Nonvolatile semiconductor storage device having a low resistance write-bit-line and a low capacitance read-bit-line pair

TOSHIBA KK13 citations84
US7613062B2Nov 3, 2009

Semiconductor memory device in which data is stored in nonvolatile state, by using semiconductor elements of metal oxide semiconductor (MOS) structure

TOSHIBA KK9 citations84
US7532062B2May 12, 2009

Semiconductor charge pump using MOS (metal oxide semiconductor) transistor for current rectifier device

TOSHIBA KK9 citations84
US7505300B2Mar 17, 2009

Nonvolatile semiconductor memory device using nonvolatile storage elements to which data can be written only once

TOSHIBA KK8 citations84
US7388770B2Jun 17, 2008

One-time programable memory with additional programming time to ensure hard breakdown of the gate insulating film

TOSHIBA KK18 citations84
US7382680B2Jun 3, 2008

Semiconductor integrated circuit device including storage unit having nonvolatile and volatile memory element sections

TOSHIBA KK13 citations84
US7345903B2Mar 18, 2008

Nonvolatile semiconductor memory device to which information can be written only once

TOSHIBA KK17 citations84
US7106649B2Sep 12, 2006

Semiconductor memory device

TOSHIBA KK15 citations84
US6154406ANov 28, 2000

Dynamic random access memory capable of simultaneously writing identical data to memory cells

TOSHIBA KK16 citations84
US7630226B2Dec 8, 2009

Semiconductor device

TOSHIBA KK10 citations82
US7924598B2Apr 12, 2011

Nonvolatile semiconductor memory

TOSHIBA KK8 citations76
US6744680B2Jun 1, 2004

Semiconductor device realized by using partial SOI technology

TOSHIBA KK5 citations74
US6529406B1Mar 4, 2003

Semiconductor device with power supply wirings and expanded wirable regions for users

TOSHIBA KK11 citations74
US5357470AOct 18, 1994

Semiconductor memory device having redundancy memory cells

TOSHIBA KK11 citations74
US10871793B2Dec 22, 2020

Constant voltage power source circuit

TOSHIBA KK4 citations70
US8045414B2Oct 25, 2011

Non-volatile semiconductor memory device

TOSHIBA KK4 citations63
US8032815B2Oct 4, 2011

Semiconductor memory device

TOSHIBA KK2 citations63
US7956397B2Jun 7, 2011

Semiconductor device, charge pumping circuit, and semiconductor memory circuit

TOSHIBA KK5 citations63
US7768341B2Aug 3, 2010

Semiconductor charge pump using MOS (metal oxide semiconductor) transistor for current rectifier device

TOSHIBA KK4 citations63
US7640466B2Dec 29, 2009

Semiconductor integrated circuit device incorporating a data memory testing circuit

TOSHIBA KK3 citations63
US7599206B2Oct 6, 2009

Non-volatile semiconductor storage device

TOSHIBA KK3 citations63
US7590018B2Sep 15, 2009

Sense amp circuit, and semiconductor memory device using the same

TOSHIBA KK2 citations63
US7557400B2Jul 7, 2009

Semiconductor device in which capacitance of a MOS capacitor is complemented with the capacitance of a wiring capacitor

TOSHIBA KK4 citations63
US7257012B2Aug 14, 2007

Nonvolatile semiconductor memory device using irreversible storage elements

TOSHIBA KK3 citations63
US7064571B2Jun 20, 2006

Multiple-select multiplexer circuit, semiconductor memory device including a multiplexer circuit and method of testing the semiconductor memory device

TOSHIBA KK3 citations63
US6650574B2Nov 18, 2003

Semiconductor device preventing signal delay among wirings

TOSHIBA KK6 citations63
US6243317B1Jun 5, 2001

Semiconductor memory device which activates column lines at high speed

TOSHIBA KK4 citations63
US7796460B2Sep 14, 2010

Nonvolatile semiconductor memory device

TOSHIBA KK6 citations61
US12267010B2Apr 1, 2025

Switching power circuit

TOSHIBA KK0 citations60
US11594963B2Feb 28, 2023

Switching power circuit

TOSHIBA KK0 citations60
US11601037B2Mar 7, 2023

Rectangular-wave-signal generating circuit and switching power supply

TOSHIBA KK0 citations52
US9985549B2May 29, 2018

Control of a dead time in a DC-DC converter

TOSHIBA KK1 citations52
US7924642B2Apr 12, 2011

Sense amp circuit, and semiconductor memory device using the same

TOSHIBA KK1 citations52
US7061814B2Jun 13, 2006

Semiconductor device realized by using partial SOI technology

TOSHIBA KK0 citations52
US11290010B2Mar 29, 2022

Switching power circuit

TOSHIBA KK0 citations50

KAKU DAICHI

1 patent

MATSUFUJI KENSUKE

1 patent

WADA OSAMU

1 patent

POWER SPIN INC

1 patent

NAMEKAWA TOSHIMASA

1 patent

Showing the top 50 of 53 patents by PatentIndex Score.