Inventor
NAMEKAWA TOSHIMASA
JP53 patents
⚠️ This page may combine multiple inventors who share the name “NAMEKAWA TOSHIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
45 patentsUS6601199B1Jul 29, 2003
Memory-embedded LSI
TOSHIBA KK145 citations99
US7046569B2May 16, 2006
Semiconductor integrated circuit device including OTP memory, and method of programming OTP memory
TOSHIBA KK56 citations96
US7928796B2Apr 19, 2011
Constant voltage boost power supply
TOSHIBA KK45 citations94
US7256641B2Aug 14, 2007
Semiconductor device including a three or more stage semiconductor charge pump
TOSHIBA KK20 citations93
US6721213B2Apr 13, 2004
Electronic circuit and semiconductor storage device
TOSHIBA KK19 citations93
US6529399B1Mar 4, 2003
Semiconductor device realized by using partial SOI technology
TOSHIBA KK15 citations93
US6259636B1Jul 10, 2001
Semiconductor memory device having redundancy circuit for relieving faulty memory cells
TOSHIBA KK39 citations93
US6205079B1Mar 20, 2001
Semiconductor integrated circuit having power-supply circuits for producing internal supply voltages
TOSHIBA KK31 citations93
US6115301ASep 5, 2000
Semiconductor memory device having defect relieving system using data line shift method
TOSHIBA KK44 citations93
US8928302B2Jan 6, 2015
Step-up/down type power supply circuit
TOSHIBA KK7 citations84
US7656738B2Feb 2, 2010
Nonvolatile semiconductor storage device having a low resistance write-bit-line and a low capacitance read-bit-line pair
TOSHIBA KK13 citations84
US7613062B2Nov 3, 2009
Semiconductor memory device in which data is stored in nonvolatile state, by using semiconductor elements of metal oxide semiconductor (MOS) structure
TOSHIBA KK9 citations84
US7532062B2May 12, 2009
Semiconductor charge pump using MOS (metal oxide semiconductor) transistor for current rectifier device
TOSHIBA KK9 citations84
US7505300B2Mar 17, 2009
Nonvolatile semiconductor memory device using nonvolatile storage elements to which data can be written only once
TOSHIBA KK8 citations84
US7388770B2Jun 17, 2008
One-time programable memory with additional programming time to ensure hard breakdown of the gate insulating film
TOSHIBA KK18 citations84
US7382680B2Jun 3, 2008
Semiconductor integrated circuit device including storage unit having nonvolatile and volatile memory element sections
TOSHIBA KK13 citations84
US7345903B2Mar 18, 2008
Nonvolatile semiconductor memory device to which information can be written only once
TOSHIBA KK17 citations84
US7106649B2Sep 12, 2006
Semiconductor memory device
TOSHIBA KK15 citations84
US6154406ANov 28, 2000
Dynamic random access memory capable of simultaneously writing identical data to memory cells
TOSHIBA KK16 citations84
US7630226B2Dec 8, 2009
Semiconductor device
TOSHIBA KK10 citations82
US7924598B2Apr 12, 2011
Nonvolatile semiconductor memory
TOSHIBA KK8 citations76
US6744680B2Jun 1, 2004
Semiconductor device realized by using partial SOI technology
TOSHIBA KK5 citations74
US6529406B1Mar 4, 2003
Semiconductor device with power supply wirings and expanded wirable regions for users
TOSHIBA KK11 citations74
US5357470AOct 18, 1994
Semiconductor memory device having redundancy memory cells
TOSHIBA KK11 citations74
US10871793B2Dec 22, 2020
Constant voltage power source circuit
TOSHIBA KK4 citations70
US8045414B2Oct 25, 2011
Non-volatile semiconductor memory device
TOSHIBA KK4 citations63
US8032815B2Oct 4, 2011
Semiconductor memory device
TOSHIBA KK2 citations63
US7956397B2Jun 7, 2011
Semiconductor device, charge pumping circuit, and semiconductor memory circuit
TOSHIBA KK5 citations63
US7768341B2Aug 3, 2010
Semiconductor charge pump using MOS (metal oxide semiconductor) transistor for current rectifier device
TOSHIBA KK4 citations63
US7640466B2Dec 29, 2009
Semiconductor integrated circuit device incorporating a data memory testing circuit
TOSHIBA KK3 citations63
US7599206B2Oct 6, 2009
Non-volatile semiconductor storage device
TOSHIBA KK3 citations63
US7590018B2Sep 15, 2009
Sense amp circuit, and semiconductor memory device using the same
TOSHIBA KK2 citations63
US7557400B2Jul 7, 2009
Semiconductor device in which capacitance of a MOS capacitor is complemented with the capacitance of a wiring capacitor
TOSHIBA KK4 citations63
US7257012B2Aug 14, 2007
Nonvolatile semiconductor memory device using irreversible storage elements
TOSHIBA KK3 citations63
US7064571B2Jun 20, 2006
Multiple-select multiplexer circuit, semiconductor memory device including a multiplexer circuit and method of testing the semiconductor memory device
TOSHIBA KK3 citations63
US6650574B2Nov 18, 2003
Semiconductor device preventing signal delay among wirings
TOSHIBA KK6 citations63
US6243317B1Jun 5, 2001
Semiconductor memory device which activates column lines at high speed
TOSHIBA KK4 citations63
US7796460B2Sep 14, 2010
Nonvolatile semiconductor memory device
TOSHIBA KK6 citations61
US12267010B2Apr 1, 2025
Switching power circuit
TOSHIBA KK0 citations60
US11594963B2Feb 28, 2023
Switching power circuit
TOSHIBA KK0 citations60
US11601037B2Mar 7, 2023
Rectangular-wave-signal generating circuit and switching power supply
TOSHIBA KK0 citations52
US9985549B2May 29, 2018
Control of a dead time in a DC-DC converter
TOSHIBA KK1 citations52
US7924642B2Apr 12, 2011
Sense amp circuit, and semiconductor memory device using the same
TOSHIBA KK1 citations52
US7061814B2Jun 13, 2006
Semiconductor device realized by using partial SOI technology
TOSHIBA KK0 citations52
US11290010B2Mar 29, 2022
Switching power circuit
TOSHIBA KK0 citations50
KAKU DAICHI
1 patentMATSUFUJI KENSUKE
1 patentWADA OSAMU
1 patentPOWER SPIN INC
1 patentNAMEKAWA TOSHIMASA
1 patentShowing the top 50 of 53 patents by PatentIndex Score.