Inventor
HELM MARK
US44 patents
⚠️ This page may combine multiple inventors who share the name “HELM MARK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
29 patentsUS5624863AApr 29, 1997
Semiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrate
MICRON TECHNOLOGY INC146 citations99
US5534449AJul 9, 1996
Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry
MICRON TECHNOLOGY INC100 citations97
US5776806AJul 7, 1998
Method of forming CMOS integrated circuitry having halo regions
MICRON TECHNOLOGY INC30 citations96
US5747855AMay 5, 1998
CMOS integrated circuitry with Halo and LDD regions
MICRON TECHNOLOGY INC38 citations96
US6124616ASep 26, 2000
Integrated circuitry comprising halo regions and LDD regions
MICRON TECHNOLOGY INC27 citations93
US6004854ADec 21, 1999
Method of forming CMOS integrated circuitry
MICRON TECHNOLOGY INC21 citations93
US5970335AOct 19, 1999
Semiconductor processing method of forming complementary n-type doped and p-type doped active regions within a semiconductor substrate
MICRON TECHNOLOGY INC19 citations93
US5683927ANov 4, 1997
Method of forming CMOS integrated circuitry
MICRON TECHNOLOGY INC28 citations93
US6849492B2Feb 1, 2005
Method for forming standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC12 citations92
US7701780B2Apr 20, 2010
Non-volatile memory cell healing
MICRON TECHNOLOGY INC11 citations83
US6358787B2Mar 19, 2002
Method of forming CMOS integrated circuitry
MICRON TECHNOLOGY INC13 citations82
US6261888B1Jul 17, 2001
Method of forming CMOS integrated circuitry
MICRON TECHNOLOGY INC13 citations82
US6074924AJun 13, 2000
Method of forming CMOS integrated circuitry
MICRON TECHNOLOGY INC13 citations82
US10685702B2Jun 16, 2020
Memory array reset read operation
MICRON TECHNOLOGY INC5 citations81
US7265012B2Sep 4, 2007
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC4 citations74
US7189607B2Mar 13, 2007
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC5 citations74
US6949795B2Sep 27, 2005
Structure and method of fabricating a transistor having a trench gate
MICRON TECHNOLOGY INC8 citations74
US9972391B2May 15, 2018
Apparatus, systems, and methods to operate a memory
MICRON TECHNOLOGY INC4 citations73
US7696579B2Apr 13, 2010
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC1 citations63
US7554846B2Jun 30, 2009
Select gate transistors and methods of operating the same
MICRON TECHNOLOGY INC4 citations63
US7439140B2Oct 21, 2008
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC1 citations63
US7332419B2Feb 19, 2008
Structure and method of fabricating a transistor having a trench gate
MICRON TECHNOLOGY INC1 citations63
US7304353B2Dec 4, 2007
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC1 citations63
US7279710B2Oct 9, 2007
Structure and method of fabricating a transistor having a trench gate
MICRON TECHNOLOGY INC1 citations63
US12119051B2Oct 15, 2024
Memory array reset read operation
MICRON TECHNOLOGY INC0 citations60
US11423976B2Aug 23, 2022
Memory array reset read operation
MICRON TECHNOLOGY INC0 citations60
US10090053B2Oct 2, 2018
Apparatus, systems, and methods to operate a memory
MICRON TECHNOLOGY INC1 citations52
US9330777B2May 3, 2016
Memory program disturb reduction
MICRON TECHNOLOGY INC1 citations52
US7413946B2Aug 19, 2008
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC0 citations52
INTEL CORP
5 patentsUS7499325B2Mar 3, 2009
Flash memory device with improved erase operation
INTEL CORP17 citations84
US10043751B2Aug 7, 2018
Three dimensional storage cell array with highly dense and scalable word line design approach
INTEL CORP5 citations83
US10186325B2Jan 22, 2019
Method and apparatus for shielded read to reduce parasitic capacitive coupling
INTEL CORP2 citations73
US9620229B2Apr 11, 2017
Three dimensional memory control circuitry
INTEL CORP4 citations73
US10593624B2Mar 17, 2020
Three dimensional storage cell array with highly dense and scalable word line design approach
INTEL CORP3 citations72
ROUND ROCK RES LLC
3 patentsUS7755146B2Jul 13, 2010
Formation of standard voltage threshold and low voltage threshold MOSFET devices
ROUND ROCK RES LLC123 citations99
US8053321B2Nov 8, 2011
Formation of standard voltage threshold and low voltage threshold MOSFET devices
ROUND ROCK RES LLC4 citations74
US7879665B2Feb 1, 2011
Structure and method of fabricating a transistor having a trench gate
ROUND ROCK RES LLC5 citations74