Inventor
ZHOU XIANFENG
US28 patents
⚠️ This page may combine multiple inventors who share the name “ZHOU XIANFENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
16 patentsUS7354812B2Apr 8, 2008
Multiple-depth STI trenches in integrated circuit fabrication
MICRON TECHNOLOGY INC29 citations93
US7691722B2Apr 6, 2010
Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability
MICRON TECHNOLOGY INC14 citations92
US6849492B2Feb 1, 2005
Method for forming standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC12 citations92
US9799727B2Oct 24, 2017
Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability
MICRON TECHNOLOGY INC7 citations84
US9349632B2May 24, 2016
Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability
MICRON TECHNOLOGY INC5 citations84
US7939394B2May 10, 2011
Multiple-depth STI trenches in integrated circuit fabrication
MICRON TECHNOLOGY INC9 citations84
US7265012B2Sep 4, 2007
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC4 citations74
US7189607B2Mar 13, 2007
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC5 citations74
US7790544B2Sep 7, 2010
Method of fabricating different gate oxides for different transistors in an integrated circuit
MICRON TECHNOLOGY INC4 citations63
US7781860B2Aug 24, 2010
Semiconductor constructions, and electronic systems
MICRON TECHNOLOGY INC2 citations63
US7696579B2Apr 13, 2010
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC1 citations63
US7473615B2Jan 6, 2009
Semiconductor processing methods
MICRON TECHNOLOGY INC4 citations63
US7439140B2Oct 21, 2008
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC1 citations63
US7304353B2Dec 4, 2007
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC1 citations63
US8035189B2Oct 11, 2011
Semiconductor constructions
MICRON TECHNOLOGY INC0 citations52
US7413946B2Aug 19, 2008
Formation of standard voltage threshold and low voltage threshold MOSFET devices
MICRON TECHNOLOGY INC0 citations52
ZHOU XIANFENG
3 patentsUS8102006B2Jan 24, 2012
Different gate oxides thicknesses for different transistors in an integrated circuit
ZHOU XIANFENG10 citations82
US8952485B2Feb 10, 2015
Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability
ZHOU XIANFENG2 citations61
US8304307B2Nov 6, 2012
Method of fabricating different gate oxides for different transistors in an integrated circuit
ZHOU XIANFENG1 citations61
CHINA PETROLEUM & CHEM CORP
3 patentsUS11215404B2Jan 4, 2022
Heat transfer tube and cracking furnace using the same
CHINA PETROLEUM & CHEM CORP1 citations62
US10209011B2Feb 19, 2019
Heat transfer tube and cracking furnace using the same
CHINA PETROLEUM & CHEM CORP1 citations62
US9505677B2Nov 29, 2016
Steam cracking processes
CHINA PETROLEUM & CHEM CORP0 citations41