Inventor

KANG DONG-KU

KR48 patents

⚠️ This page may combine multiple inventors who share the name “KANG DONG-KU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG DONG-KU

SAMSUNG ELECTRONICS CO LTD

Programming method for flash memory capable of compensating reduction of read margin between states due to hot temperature stress

Multi-bit flash memory device and program and read methods thereof

Nonvolatile memory device and methods of programming and reading the same

Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells

Flash memory device and method for adjusting read voltage of flash memory device

Multi-level cell memory device and method thereof

Flash memory device using program data cache and programming method thereof

Non-volatile memory device and method of programming the same

Over-sampling read operation for a flash memory device

Multi-level cell memory devices using trellis coded modulation and methods of storing data in and reading data from the memory devices

Multi-bit data memory system and read operation

Method and apparatus for controlling reading level of memory cell

MSB-based error correction for flash memory system

Data verification method and semiconductor memory

Flash memory device utilizing multi-page program method

Methods of operating nonvolatile memory devices, and memory systems including nonvolatile memory devices

Nonvolatile memory device maintaining a bitline precharge during program verification periods for multi-level memory cells and related programming method

Programmed data verification for a semiconductor memory device

Non-volatile memory device and method of operation therefor

Non-volatile memory system and data read method of non-volatile memory system

Multi-bit programming device and method using single-bit memory cells

Non-volatile memory devices and methods of programming the same

Non-volatile memory device and method of operation therefor

Programming method for flash memory capable of compensating reduction of read margin between states due to high temperature stress

Semiconductor memory device including capacitor

Page buffer and memory device including the same

Page buffer and memory device including the same

Data storage apparatus, coding unit, systems including the same, method of coding and method of reading data

Nonvolatile memory device and system, and method of programming a nonvolatile memory device

Memory cell programming method and semiconductor memory device

Apparatus for reading data and method using the same

Device for reading memory data and method using the same

Program method of flash memory capable of compensating reduction of read margin between states due to hot temperature stress

Memory device and a memory system including the same

Semiconductor memory device including capacitor

Error control code apparatuses and methods of using the same

KANG DONG-KU

Non-volatile memory device and method of programming the same

Over-sampling read operation for a flash memory device

Over-sampling read operation for a flash memory device

Data storage apparatus, coding unit, systems including the same, method of coding and method of reading data

MSB-based error correction for flash memory system

KANG DONG KU

Non-volatile memory devices and systems including the same, and methods of programming non-volatile memory devices

Method and apparatus for adjusting maximum verify time in nonvolatile memory device

KONG JUN JIN

Multi-level cell memory devices and methods of storing data in and reading data from the memory devices

Error control code apparatuses and methods of using the same

PARK SUNG CHUNG

Multi-level cell memory device and method thereof

KIM SEUNG-BUM

Flash memory device and memory system including the same

PARK SANG-IN

Method of testing non-volatile memory device and method of managing non-volatile memory device