Inventor
HENNINGER RALF
DE12 patents
Patents
12 patentsUS6806533B2Oct 19, 2004
Semiconductor component with an increased breakdown voltage in the edge area
INFINEON TECHNOLOGIES AG83 citations98
US6690062B2Feb 10, 2004
Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance
INFINEON TECHNOLOGIES AG119 citations98
US7005351B2Feb 28, 2006
Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration
INFINEON TECHNOLOGIES AG113 citations97
US6833584B2Dec 21, 2004
Trench power semiconductor
INFINEON TECHNOLOGIES AG96 citations97
US7091573B2Aug 15, 2006
Power transistor
INFINEON TECHNOLOGIES AG62 citations96
US7777278B2Aug 17, 2010
Lateral semiconductor component with a drift zone having at least one field electrode
INFINEON TECHNOLOGIES AG22 citations92
US7173306B2Feb 6, 2007
Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
INFINEON TECHNOLOGIES AG22 citations92
US6891223B2May 10, 2005
Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell
INFINEON TECHNOLOGIES AG52 citations92
US6927101B2Aug 9, 2005
Field-effect-controllable semiconductor component and method for fabricating the component
INFINEON TECHNOLOGIES AG8 citations74
US7274077B2Sep 25, 2007
Trench transistor
INFINEON TECHNOLOGIES AG8 citations73
US6903416B2Jun 7, 2005
Trench transistors and methods for fabricating trench transistors
INFINEON TECHNOLOGIES AG5 citations62
US7060562B2Jun 13, 2006
Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor
INFINEON TECHNOLOGIES AG4 citations61