Inventor

IZUNOME KOJI

JP19 patents

⚠️ This page may combine multiple inventors who share the name “IZUNOME KOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IZUNOME KOJI

TOSHIBA CERAMICS CO

Manufacturing method for strained silicon wafer

Semiconductor substrate comprising a support substrate which comprises a gettering site

Manufacturing method for strained silicon wafer

Manufacturing method for a silicon substrate having strained layer

JAPAN RES DEV CORP

Growth of silicon crystal from melt having extraordinary eddy flows on its surface

Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction

Preparation of silicon melt for use in pull method of manufacturing single crystal

Growth of silicon single crystal

SHIBAURA MECHATRONICS CORP

Wafer inspection apparatus

Surface inspection apparatus and surface inspection method

Surface inspection apparatus and surface inspection method for strained silicon wafer

SENDA TAKESHI

Silicon wafer and method for heat-treating silicon wafer

Method of heat treating silicon wafer

Method for heat treating a silicon wafer

COVALENT MATERIALS CORP

Method of manufacturing silicon wafer

Manufacturing method for silicon wafer

GLOBALWAFERS JAPAN CO LTD

Silicon wafer and method for producing silicon wafer

Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate

ISOGAI HIROMICHI

Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process